Dual PWM Step-Down Converter in a 2mm x
2mm Package for WCDMA PA and RF Power
2  _______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS
(V
CC
= V
IN1
= V
IN2
= V
PAEN
= V
RFEN1
= V
RFEN2
= 3.6V, V
REFIN
= 0.72V, T
A
= -40癈 to +85癈, typical values are at T
A
= +25癈,
unless otherwise noted.) (Note 2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
PARAMETER
CONDITIONS
MIN   TYP   MAX  UNITS
INPUT SUPPLY
Input Voltage
V
CC
, V
IN1,
V
IN2
2.7
5.5    V
Input Undervoltage Threshold   V
CC
rising, 180mV typical hysteresis
2.52   2.63
2.70    V
T
A
= +25癈
0.1
4
Shutdown Supply Current
V
P AE N
= V
R FE N 1
=
V
R FE N
2
= 0
T
A
= +85癈
0.1
礎
LOGIC CONTROL
PAEN, RFEN1, RFEN2 Logic
Input High Voltage
2.7V d V
CC
d 5.5V
1.3
V
PAEN, RFEN1, RFEN2 Logic
Input Low Voltage
2.7V d V
CC
d 5.5V
0.4    V
PAEN, RFEN1, RFEN2 Internal
Pulldown Resistor
400   800   1600   k&
T
A
= +25癈
0.01    1
PAEN, RFEN1, RFEN2 Logic
Input Current
V
IL
= 0
T
A
= +85癈
0.1
礎
REFBP
REFBP Output Voltage
0礎 d IREFBP d 1礎
1.237  1.250  1.263   V
THERMAL PROTECTION
Thermal Shutdown
T
A
rising, 20癈 typical hysteresis
+160
癈
OUT1
Quiescent Supply Current
VRFEN1 = VRFEN2 = 0V, IPA = 0A,
no switching
155
礎
p-channel MOSFET switch, I
LX1
= -200mA
0.16   0.40
On-Resistance
n-channel MOSFET rectifier, I
LX1
= 500mA
0.17   0.40
&
Load Regulation
R
L
is the inductor resistance
R
L
/2
V/A
T
A
= +25癈
0.1    5
LX1 Leakage Current
V
IN1
= 5.5V, V
LX1
= 0V
T
A
= +85癈
1
礎
ABSOLUTE MAXIMUM RATINGS
V
CC
, IN1, IN2, PAEN, RFEN1, RFEN2,
REFIN, OUT2, REFBP to AGND.........................-0.3V to +6.0V
PAOUT to AGND........................................-0.3V to (V
IN1
+ 0.3V)
LDO to AGND.........................................-0.3V to (V
OUT2
+ 0.3V)
IN1, IN2 to V
CC
......................................................-0.3V to +0.3V
IN1 to IN2..............................................................-0.3V to +0.3V
PGND1, PGND2 to AGND.....................................-0.3V to +0.3V
LX1 Current.......................................................................1A
RMS
LX2 Current.......................................................................1A
RMS
IN1 and PAOUT Current....................................................1A
RMS
PAOUT, OUT2, LDO Short Circuit to PGND1,
PGND2....................................................................Continuous
Continuous Power Dissipation (T
A
= +70癈)
16-Bump UCSP (derate 12.5mW/癈 above +70癈)............1W
Junction-to-Ambient Thermal Resistance (?/DIV>
JA
) (Note 1)...96癈/W
Junction Temperature......................................................+150癈
Storage Temperature Range.............................-65癈 to +150癈
Bump Temperature (soldering, reflow) ...........................+260癈
Note 1:Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial
.