参数资料
型号: MAX9779ETI+T
厂商: Maxim Integrated Products
文件页数: 7/19页
文件大小: 0K
描述: IC AMP AUDIO PWR 2.6W AB 28TQFN
标准包装: 2,500
系列: DirectDrive®
类型: AB 类
输出类型: 2-通道(立体声)带立体声耳机
在某负载时最大输出功率 x 通道数量: 2.6W x 2 @ 3 欧姆; 110mW x 2 @ 16 欧姆
电源电压: 4.5 V ~ 5.5 V
特点: 消除爆音,短路保护和热保护,关闭
安装类型: 表面贴装
供应商设备封装: 28-TQFN-EP(5x5)
封装/外壳: 28-WFQFN 裸露焊盘
包装: 带卷 (TR)
MAX9779
2.6W Stereo Audio Power Amplifier and
DirectDrive Headphone Amplifier
______________________________________________________________________________________
15
SUPPLIER
PHONE
FAX
WEBSITE
Taiyo Yuden
800-348-2496
847-925-0899
www.t-yuden.com
TDK
807-803-6100
847-390-4405
www.component.tdk.com
Table 2. Suggested Capacitor Manufacturers
BIAS Capacitor
BIAS is the output of the internally generated DC bias
voltage. The BIAS bypass capacitor, CBIAS, improves
PSRR and THD+N by reducing power supply and other
noise sources at the common-mode bias node, and
also generates the clickless/popless, startup/shutdown
DC bias waveforms for the speaker amplifiers. Bypass
BIAS with a 1F capacitor to GND.
Charge-Pump Capacitor Selection
Use capacitors with an ESR less than 100m
for opti-
mum performance. Low-ESR ceramic capacitors mini-
mize the output resistance of the charge pump. For
best performance over the extended temperature
range, select capacitors with an X7R dielectric. Table 4
lists suggested manufacturers.
Flying Capacitor (C1)
The value of the flying capacitor (C1) affects the load
regulation and output resistance of the charge pump. A
C1 value that is too small degrades the device’s ability
to provide sufficient current drive, which leads to a loss
of output voltage. Increasing the value of C1 improves
load regulation and reduces the charge-pump output
resistance to an extent. See the Output Power vs.
Charge-Pump Capacitance and Load Resistance
graph in the Typical Operating Characteristics. Above
2.2F, the on-resistance of the switches and the ESR of
C1 and C2 dominate.
Output Capacitor (C2)
The output capacitor value and ESR directly affect the
ripple at CPVSS. Increasing the value of C2 reduces
output ripple. Likewise, decreasing the ESR of C2
reduces both ripple and output resistance. Lower
capacitance values can be used in systems with low
maximum output power levels. See the Output Power
vs. Charge-Pump Capacitance and Load Resistance
graph in the Typical Operating Characteristics.
CPVDD Bypass Capacitor
The CPVDD bypass capacitor (C3) lowers the output
impedance of the power supply and reduces the
impact of the MAX9779’s charge-pump switching
transients. Bypass CPVDD with C3, the same value as C1,
and place it physically close to CPVDD and PGND (refer
to the MAX9779 Evaluation Kit for a suggested layout).
Powering Other Circuits from a
Negative Supply
An additional benefit of the MAX9779 is the internally gen-
erated negative supply voltage (CPVSS). CPVSS is used
by the MAX9779 to provide the negative supply for the
headphone amplifiers. It can also be used to power other
devices within a design. Current draw from CPVSS should
be limited to 5mA; exceeding this affects the operation of
the headphone amplifier. A typical application is a nega-
tive supply to adjust the contrast of LCD modules.
When considering the use of CPVSS in this manner,
note that the charge-pump voltage of CPVSS is roughly
proportional to CPVDD and is not a regulated voltage.
The charge-pump output impedance plot appears in
the Typical Operating Characteristics.
Layout and Grounding
Proper layout and grounding are essential for optimum
performance. Use large traces for the power-supply
inputs and amplifier outputs to minimize losses due to
parasitic trace resistance, as well as route head away
from the device. Good grounding improves audio per-
formance, minimizes crosstalk between channels, and
prevents any switching noise from coupling into the audio
signal. Connect CPGND, PGND, and GND together at a
single point on the PC board. Route CPGND and all traces
that carry switching transients away from GND, PGND,
and the traces and components in the audio signal path.
Connect all components associated with the charge
pump (C2 and C3) to the CPGND plane. Connect VSS
and CPVSS together at the device. Place the charge-
pump capacitors (C1, C2, and C3) as close to the
device as possible. Bypass HPVDD and PVDD with a
0.1F capacitor to GND. Place the bypass capacitors
as close to the device as possible.
Use large, low-resistance output traces. As load imped-
ance decreases, the current drawn from the device out-
puts increase. At higher current, the resistance of the
output traces decrease the power delivered to the load.
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