
MAX9945
38V, Low-Noise, MOS-Input,
Low-Power Op Amp
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VCC = +15V, VEE = -15V, VIN+ = VIN- = VGND = 0V, ROUT = 100kΩ to GND, TA = -40°C to +125°C, typical values are at TA = +25°C,
unless otherwise noted.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Supply Voltage (VCC to VEE) ..................................-0.3V to +40V
IN+, IN-, OUT Voltage......................(VEE - 0.3V) to (VCC + 0.3V)
IN+ to IN- .............................................................................±12V
OUT Short Circuit to Ground Duration....................................10s
Continuous Input Current into Any Pin .............................±20mA
Continuous Power Dissipation (TA = +70°C)
6-Pin TDFN-EP (derate 23.8mW/°C above +70°C)
Multilayer Board ....................................................1904.8mW
8-Pin MAX (derate 4.8mW/°C above +70°C)
Multilayer Board ......................................................387.8mW
Operating Temperature Range .........................-40°C to +125°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature ....................................................+260°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DC ELECTRICAL CHARACTERISTICS
TA = +25°C
VEE
VCC -
1.2
Input Voltage Range
VIN+, VIN-
Guaranteed by
CMRR
TA = TMIN to TMAX
VEE
VCC -
1.4
V
TA = +25°C
±0.6
±5
Input Offset Voltage
VOS
TA = TMIN to TMAX
±8
mV
Input Offset Voltage Drift
VOS - TC
2
V/°C
-40°C
≤ TA ≤ +25°C
50
150
fA
-40°C
≤ TA ≤ +70°C
12
pA
-40°C
≤ TA ≤ +85°C
55
pA
Input Bias Current (Note 3)
IB
-40°C
≤ TA ≤ +125°C
1.9
nA
VCM = VEE to VCC - 1.2V,
TA = +25°C
78
94
Common-Mode Rejection Ratio
CMRR
VCM = VEE to VCC - 1.4V,
TA = TMIN to TMAX
78
94
dB
VEE + 0.3V
≤ VOUT ≤ VCC - 0.3V,
ROUT = 100k
Ω to GND
110
130
Open-Loop Gain
AOL
VEE + 0.75V
≤ VOUT ≤ VCC - 0.75V,
ROUT = 10k
Ω to GND
110
130
dB
Output Short-Circuit Current
ISC
25
mA
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TDFN-EP
Junction-to-Ambient Thermal Resistance (
θJA) ............42°C/W
Junction-to-Case Thermal Resistance (
θJC) ...................9°C/W
MAX
Junction-to-Ambient Thermal Resistance (
θJA) .......206.3°C/W
Junction-to-Case Thermal Resistance
θJC ...................42°C/W