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| 型号： | MAX9981ETX+D |
| 厂商： | Maxim Integrated |
| 文件页数： | 3/15页 |
| 文件大小： | 0K |
| 描述： | IC MIXER DUAL SIGE 36-QFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 50 |
| 系列： | MAX9981 |
| RF 型： | 手机，EDGE，GSM |
| 频率： | 825MHz ~ 915MHz |
| 混频器数目： | 2 |
| 增益： | 2.7dB |
| 噪音数据： | 10.8dB |
| 电流 - 电源： | 325mA |
| 电源电压： | 4.75 V ~ 5.25 V |
| 包装： | 管件 |
| 封装/外壳： | 36-WFQFN 裸露焊盘 |
| 供应商设备封装： | 36-TQFN 裸露焊盘（6x6） |
825MHz to 915MHz, Dual SiGe High-Linearity
Active Mixer
AC ELECTRICAL CHARACTERISTICS (continued)
( Typical Application Circuit , V CC = +4.75V to +5.25V, P LO = -5dBm to +5dBm, f RF = 825MHz to 915MHz, f LO = 725MHz to 1085MHz,
T A = -40 ° C to +85 ° C, unless otherwise noted. Typical values are at V CC = +5.0V, P RF = -5dBm, P LO = 0dBm, f RF = 870MHz,
f LO = 770MHz, T A = +25 ° C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
Input 1dB Compression Point
Input Third-Order Intercept Point
2 RF - 2 LO Spur Rejection
3 RF - 3 LO Spur Rejection
SYMBOL
P 1dB
IIP3
2 × 2
3 × 3
CONDITIONS
Low-side injection
P LO = -5dBm to +5dBm (Notes 3, 4)
Main
f RF = 915MHz, f LO = 815MHz,
f SPUR = 865MHz, P RF = -5dBm
Diversity
f RF = 915MHz, f LO = 815MHz,
f SPUR = 848.3MHz, P RF = -5dBm
MIN
TYP
13.6
27.3
53.3
43.2
79.7
MAX
UNITS
dBm
dBm
dBc
dBc
Maximum LO Leakage at RF Port
Maximum LO Leakage at IF Port
Minimum RF to IF Isolation
LO1 to LO2 Isolation
P LO = -5dBm to +5dBm,
f LO = 725MHz to 1100MHz
P LO = -5dBm to +5dBm,
f LO = 725MHz to 1100MHz
P LO = -5dBm to +5dBm,
f RF = 825MHz to 915MHz
f RF = 825MHz to 915MHz, P LO1 = P LO2 =
+5dBm, f IF = 100MHz (Note 5)
-42
-30.6
18
52
dBm
dBm
dB
dB
P RFMAIN = -5dBm, RFDIV
Minimum Channel Isolation
f RF = 825MHz
to 915MHz,
f LO = 725MHz
to 1085MHz
terminated with 50 ? .
Measured power at IFDIV
relative to IFMAIN.
P RFDIV = -5dBm, RFMAIN
terminated with 50 ? .
Measured power at
39.5
42
dBc
IFMAIN relative to IFDIV.
LO Switching Time
RF Return Loss
LO Return Loss
IF Return Loss
50% of LOSEL to IF settled within 2 °
LO port selected
LO port unselected
RF and LO terminated into 50 ? ,
f IF = 100MHz (Note 6)
250
25
19
14.3
15
ns
dB
dB
dB
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Guaranteed by design and characterization.
All limits reflect losses of external components. Output measurements taken at IF OUT of Typical Application Circuit .
Production tested.
Two tones at 1MHz spacing, -5dBm per tone at RF port.
Measured at IF port at IF frequency. f LO1 and f LO2 are offset by 1MHz.
IF return loss can be optimized by external matching components.
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| MAX9982ETP | 功能描述:射频混合器 825-915MHz Dual SiGe Active Mixer RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| MAX9982ETP+ | 功能描述:射频混合器 825-915MHz Dual SiGe Active Mixer RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| MAX9982ETP+D | 功能描述:射频混合器 825-915MHz Dual SiGe Active Mixer RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
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