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参数资料
| 型号： | MAX9981ETX+TD |
| 厂商： | Maxim Integrated |
| 文件页数： | 2/15页 |
| 文件大小： | 0K |
| 描述： | IC MIXER DUAL SIGE 36-QFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 系列： | MAX9981 |
| RF 型： | 手机，EDGE，GSM |
| 频率： | 825MHz ~ 915MHz |
| 混频器数目： | 2 |
| 增益： | 2.7dB |
| 噪音数据： | 10.8dB |
| 电流 - 电源： | 325mA |
| 电源电压： | 4.75 V ~ 5.25 V |
| 包装： | 带卷 (TR) |
| 封装/外壳： | 36-WFQFN 裸露焊盘 |
| 供应商设备封装： | 36-TQFN 裸露焊盘（6x6） |
825MHz to 915MHz, Dual SiGe High-Linearity
Active Mixer
ABSOLUTE MAXIMUM RATINGS
V CC ........................................................................-0.3V to +5.5V
IFMAIN+, IFMAIN-, IFDIV+, IFDIV-,
MAINBIAS, DIVBIAS, LOSEL..................-0.3V to (V CC + 0.3V)
TAPMAIN, TAPDIV ..............................................................+5.5V
MAINBIAS, DIVBIAS Current ................................................5mA
RFMAIN, RFDIV, LO1, LO2 Input Power ........................+20dBm
Continuous Power Dissipation (T A = +70 ° C)
36-Pin QFN (derate 33mW/ ° C above +70 ° C)..............2200mW
Operating Temperature Range ...........................-40 ° C to +85 ° C
Junction Temperature ......................................................+150 ° C
Storage Temperature Range .............................-65 ° C to +150 ° C
Lead Temperature (soldering, 10s) .................................+300 ° C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
( Typical Application Circuit , V CC = +4.75V to +5.25V, no RF signals applied, all RF inputs and outputs terminated with 50 ? ,
267 ? resistors connected from MAINBIAS and DIVBIAS to GND, T A = -40 ° C to +85 ° C, unless otherwise noted. Typical values are at
V CC = +5.0V, T A = +25 ° C, unless otherwise noted.)
PARAMETER
Supply Voltage
Supply Current
SYMBOL
V CC
I CC
CONDITIONS
MIN
4.75
260
TYP
5.00
291
MAX
5.25
325
UNITS
V
mA
Input High Voltage
Input Low Voltage
V IH
V IL
3.5
0.4
V
V
LOSEL Input Current
I LOSEL
-5
+5
μA
AC ELECTRICAL CHARACTERISTICS
( Typical Application Circuit , V CC = +4.75V to +5.25V, P LO = -5dBm to +5dBm, f RF = 825MHz to 915MHz, f LO = 725MHz to 1085MHz,
T A = -40 ° C to +85 ° C, unless otherwise noted. Typical values are at V CC = +5.0V, P RF = -5dBm, P LO = 0dBm, f RF = 870MHz,
f LO = 770MHz, T A = +25 ° C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
RF Frequency
LO Frequency
SYMBOL
f RF
f LO
CONDITIONS
MIN
825
725
TYP
MAX
915
1085
UNITS
MHz
MHz
Must meet RF and LO frequency range. IF
IF Frequency
f IF
matching components affect IF frequency
70
170
MHz
range.
LO Drive Level
P LO
-5
+5
dBm
Conversion Gain (Note 3)
G C
V CC = +5.0V,
f IF = 100MHz,
low-side injection,
P RF = 0dBm,
P LO = -5dBm
Cellular band,
f RF = 825MHz to
850MHz
GSM band,
f RF = 880MHz
to 915MHz
2.7
2.1
dB
Gain Variation from Nominal
f RF = 825MHz to 915MHz, 3 σ
±0.6
dB
Inject P IN = -20dBm at f LO + 100MHz into
Conversion Loss from LO to IF
LO port. Measure 100MHz at IF port as
53
dB
P OUT . No RF signal at RF port.
Noise Figure
NF
100MHz IF,
low-side
Cellular band,
f RF = 825MHz to 850MHz
10.8
dB
injection
GSM band,
f RF = 880MHz to 915MHz
11.9
2
_______________________________________________________________________________________
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| MAX9982ETP+ | 功能描述:射频混合器 825-915MHz Dual SiGe Active Mixer RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| MAX9982ETP+D | 功能描述:射频混合器 825-915MHz Dual SiGe Active Mixer RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
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