参数资料
型号: MAX9993ETP+T
厂商: Maxim Integrated
文件页数: 5/12页
文件大小: 0K
描述: IC MIXER DOWN CONV 20-TQFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
系列: MAX9993
RF 型: 手机,DCS,EDGE,PCS,UMTS,WLL
频率: 1.7GHz ~ 2.2GHz
混频器数目: 1
增益: 8.5dB
噪音数据: 9.5dB
次要属性: 降频变频器
电流 - 电源: 230mA
电源电压: 4.75 V ~ 5.25 V
包装: 带卷 (TR)
封装/外壳: 20-WQFN 裸露焊盘
供应商设备封装: 20-TQFN-EP(5x5)
High-Linearity 1700MHz to 2200MHz Down-
Conversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(MAX9993 EV Kit, V CC = 5.0V, P RF = -5dBm, P LO = +3dBm, LO is low-side injected for a 200MHz IF, T A = +25 ° C. For high-side LO
injection curves, LO frequency is beyond maximum specified range, and is shown for completeness.)
26
25
24
INPUT IP3 vs. RF FREQUENCY
LOW-SIDE INJECTION
P LO = +6dBm
26
25
24
INPUT IP3 vs. RF FREQUENCY
LOW-SIDE INJECTION
V CC = 5.25V
26
25
24
INPUT IP3 vs. RF FREQUENCY
HIGH-SIDE INJECTION
23
P LO = +3dBm
P LO = 0dBm
23
V CC = 5.0V
V CC = 4.75V
23
T A = +85 ° C
T A = +25 ° C
T A = -40 ° C
22
21
15
1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200
RF FREQUENCY (MHz)
INPUT P 1dB vs. RF REQUENCY
LOW-SIDE INJECTION
22
21
15
1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200
RF FREQUENCY (MHz)
INPUT P 1dB vs. RF FREQUENCY
LOW-SIDE INJECTION
22
21
15
1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200
RF FREQUENCY (MHz)
INPUT P 1dB vs. RF FREQUENCY
LOW-SIDE INJECTION
14
T A = +25 ° C
T A = +85 ° C
14
14
V CC = 5.25C
V CC = 5.0V
P LO = +3dBm, +6dBm
13
13
13
12
T A = -40 ° C
12
P LO = 0dBm
12
V CC = 4.75V
11
10
15
1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200
RF FREQUENCY (MHz)
INPUT P 1dB vs. RF FREQUENCY
HIGH-SIDE INJECTION
11
10
44
1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200
RF FREQUENCY (MHz)
LO SWITCH ISOLATION vs. RF FREQUENCY
LOW-SIDE INJECTION
11
10
44
1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200
RF FREQUENCY (MHz)
LO SWITCH ISOLATION vs. RF FREQUENCY
LOW-SIDE INJECTION
14
T A = +85 ° C
T A = +25 ° C
43
42
T A = -40 ° C
P LO1 = P LO2 = +3dBm
? f LO = 1MHz
43
42
P LO = 0dBm, +3dBm
P LO1 = P LO2
? f LO = 1MHz
41
41
13
40
40
39
T A = +25 ° C
39
12
38
38
11
T A = -40 ° C
37
36
T A = +85 ° C
37
36
P LO = +6dBm
35
35
10
1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200
RF FREQUENCY (MHz)
34
1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200
RF FREQUENCY (MHz)
34
1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200
RF FREQUENCY (MHz)
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