参数资料
型号: MB2M-E3/45
厂商: VISHAY SEMICONDUCTORS
元件分类: 桥式整流
英文描述: 0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
封装: ROHS COMPLIANT, MINI, PLASTIC, CASE MBM, 4 PIN
文件页数: 2/4页
文件大小: 84K
代理商: MB2M-E3/45
MB2M, MB4M & MB6M
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88660
Revision: 01-Feb-08
2
Note:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
Notes:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MB2M
MB4M
MB6M
UNIT
Maximum instantaneous forward voltage
drop per diode
0.4 A
VF
1.0
V
Maximum DC reverse current at rated
DC blocking voltage per diode
TA = 25 °C
TA = 125 °C
IR
5.0
100
A
Typical junction capacitance per diode (1)
CJ
13
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MB2M
MB4M
MB6M
UNIT
Typical thermal resistance
RθJA
RθJL
85 (1)
70 (2)
20 (1)
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MB2M-E3/45
0.22
45
100
Tube
Figure 1. Derating Curve for Output Rectified Current
0
20
40
60
80
100
120
140
160
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Aluminum Substrate
Glass
Epoxy
P.C.B.
Resistive or Inductive Load
A
v
er
age
F
o
rw
ard
Re
ctified
C
u
rrent
(A)
Ambient Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
1
10
100
0
5
10
15
20
25
30
35
f = 60 Hz
f = 50 Hz
T
A = 40 °C
Single Half Sine-Wave
Number of Cycles
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
1.0 Cycle
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