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参数资料
| 型号： | MB2S-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 桥式整流 |
| 英文描述： | 0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA |
| 封装： | LEAD FREE, MINIATURE, PLASTIC, MBS, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 194K |
| 代理商： | MB2S-E3 |
MB2S, MB4S & MB6S
Document Number 88661
12-Jul-05
Vishay General Semiconductor
www.vishay.com
1
TO-269AA (MBS)
~
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifier
Major Ratings and Characteristics
IF(AV)
0.5 A
VRRM
200 V, 400 V, 600 V
IFSM
35 A
IR
5 A
VF
1.0 V
Tj max.
150 °C
Features
UL Recognition, file number E54214
Saves space on printed circuit boards
Ideal for automated placement
High surge current capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
General purpose use in ac-to-dc bridge full wave rec-
tification for Power Supply, Lighting Ballaster, Battery
Charger, Home Appliances, Office Equipment, and
Telecommunication applications
Mechanical Data
Case: TO-269AA (MBS)
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity: As marked on body
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
MB2S
MB4S
MB6S
Unit
Device marking code
2
4
6
Maximum repetitive peak reverse voltage
VRRM
200
400
600
V
Maximum RMS voltage
VRMS
140
280
420
V
Maximum DC blocking voltage
VDC
200
400
600
V
Maximum average forward output rectified current (see Fig. 1)
on glass-epoxy P.C.B.
on aluminum substrate
IF(AV)
0.5(1)
0.8(2)
A
Peak forward surge current 8.3 msec single half sine-wave
superimposed on rated load
IFSM
35
A
Rating for fusing (t < 8.3 ms)
I2t
5.0
A2sec
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| MB4S-E3 | 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA |
| MB4S | 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA |
| MB356-BC01-BP | 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| MB352-BC01-BP | 35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE |
| MB3510-BC01-BP | 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MB2S-E3/30 | 制造商:Vishay Angstrohm 功能描述:Diode Rectifier Bridge Single 200V 0.8A 4-Pin TO-269AA T/R |
| MB2S-E3/45 | 功能描述:桥式整流器 0.5 Amp 400 Volt RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| MB2S-E3/80 | 功能描述:桥式整流器 200 Volt 0.5 Amp 35 Amp IFSM RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| MB2S-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Glass Passivated Bridge Rectifiers |
| MB2S-MB10S | 制造商:KINGTRONICS 制造商全称:KINGTRONICS 功能描述:Single Phase 0.8 AMPS. Glass Passivated Bridge Rectifiers Voltage Range 200 to 1000 Volts Current 0.8 Amperes |
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