- 您现在的位置：买卖IC网 > PDF目录133500 > MB356W (DIODES INC) 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE PDF资料下载
参数资料
| 型号： | MB356W |
| 厂商： | DIODES INC |
| 元件分类： | 桥式整流 |
| 英文描述： | 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, METAL, MB-W, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 64K |
| 代理商： | MB356W |
DS21303 Rev. 7 - 3
1 of 4
MB15(W)/25(W)/35(W)
www.diodes.com
Diodes Incorporated
High Conductivity
Metal Case
Superior Thermal Design
Terminals Solderable per MIL-STD-202, Method 208
Universal Terminals; Snap-on, Solder or P.C. Board Mounting
Lead Free Finish, RoHS Compliant (Date Code 0514+)
(Note 2)
Characteristic
Symbol
-05
-1
-2
-4
-6
-8
-10
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average
MB15
Rectified Output Current
MB25
@ TC = 55
°C
MB35
I(AV)
15.0
25.0
35.0
A
Peak Forward Surge Current Single
MB15
Half Sine-Wave Superimposed on
MB25
Rated Load
MB35
IFSM
300
400
A
Maximum Instantaneous @ 7.5A
MB15
Forward Voltage Drop per @12.5A
MB25
Rated Load @17.5A
MB35
VF
1.1
1.2
V
Maximum Reverse DC current at Rated
@TA = 25
°C
DC Blocking Voltage (per Element)
@TA = 100
°C
IR
10
1.0
A
mA
I2t rating for fusing (8.3ms)
MB15
MB25
MB35
I2t
373
664
A2s
Typical Thermal Resistance (Note 1)
RqJC
2.5
°C/W
Operating and Storage Temperature Range
TJ,TSTG
-55 to +150
°C
Features
Terminals: 0.25" Faston Terminals
Case material - UL Flammability Rating Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Approx Weight: 29 grams
Mounting Position: Bolt Down on Heat-sink with Silicone
Thermal Compound Between Bridge and Mounting Surface for
Maximum Heat Transfer Efficiency
Mounting Torque: 20 in. lb. Max.
Polarity: Polarity Symbols Marked on Case
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings and Electrical Characteristics
Notes:
1. Thermal Resistance from junction to case
2. EC Directive 2002/95/EC (RoHS) revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex
Notes 5 and 7.
Mechanical Data
Suffix “W” denotes wire leads
MB15(W) / 25(W) / 35(W)
HIGH CURRENT SILICON BRIDGE RECTIFIER
MB-W
Dim
Min
Max
A
28.40
28.70
B
10.97
11.23
C
15.50
17.60
E
22.86
25.40
G
13.30
15.30
H
Hole for #10 screw
4.85
5.59
J
17.10
19.10
K
10.40
12.40
L
0.97
Nominal
1.07
M
30.50
N
10.97
11.23
P
17.10
19.10
C
A
G
E
B
H
(AC)
(+)
(-)
H
J
A
C
K
A
M
N
H
L
P
A
P
(AC)
(-)
(+)
相关PDF资料 |
PDF描述 |
|---|---|
| MSS-20051-E26 | SILICON, ZERO BARRIER SCHOTTKY, X BAND, MIXER DIODE |
| MA46029 | 11 GHz - 12.5 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE IMPATT DIODE |
| MA46042 | 5.5 GHz - 6.5 GHz, GALLIUM ARSENIDE, PULSED IMPATT DIODE |
| MH1001 | 30 kV, SILICON, VOLTAGE MULTIPLIER DIODE |
| MTZJ11AT-14 | 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MB356-W | 功能描述:桥式整流器 35A 600V RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| MB356WB | 制造商:Diodes Incorporated 功能描述: |
| MB356W-B | 功能描述:桥式整流器 600V 35A RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| MB356W-BP | 功能描述:桥式整流器 600V 35A RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| MB358 | 功能描述:桥式整流器 35A 800V RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。