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参数资料
| 型号： | MB4S-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 桥式整流 |
| 英文描述： | 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA |
| 封装： | LEAD FREE, MINIATURE, PLASTIC, MBS, 4 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 194K |
| 代理商： | MB4S-E3 |
www.vishay.com
2
Document Number 88661
12-Jul-05
MB2S, MB4S & MB6S
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Notes:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol
MB2S
MB4S
MB6S
Unit
Max. instantaneous forward voltage
drop per leg
at 0.4 A
VF
1.0
V
Maximum DC reverse current at rated
DC blocking voltage per leg
TA = 25 °C
TA = 125 °C
IR
5.0
100
A
Typical junction capacitance per leg
at 4.0 V, 1 MHz
CJ
13
pF
Parameter
Symbol
MB2S
MB4S
MB6S
Unit
Typical thermal resistance per leg
RθJA
RθJL
85(1)
70(2)
20(1)
°C/W
Figure 1. Derating Curve for Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Leg
0
20
40
60
80
100
120 140
160
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
A
v
er
age
F
orw
ard
Rectified
Current
(A)
Ambient Temperature ( °C)
Aluminum Substrate
Glass
Epoxy
P.C.B.
Resistive or Inductive Load
1
10
100
0
5.0
10
15
20
25
30
35
P
eak
F
orw
ard
Surge
Current
(A)
Number of Cycles
TA =40 °C
Single Half Sine-Wave
f=60Hz
f=50Hz
1 Cycle
Figure 3. Typical Forward Voltage Characteristics Per Leg
Figure 4. Typical Reverse Leakage Characteristics Per Leg
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
Instantaneous
F
orw
ard
Current
(A)
Instantaneous Forward Voltage (V)
TJ = 150 °C
TJ =25 °C
Pulse Width = 300
s
1% Duty Cycle
0
20
40
60
80
100
0.01
0.1
1
10
100
Instantaneous
Re
v
erse
Leakage
Current
(
A)
Percent of Rated Peak Reverse Voltage (%)
TJ = 125 °C
TJ =25 °C
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