参数资料
型号: MB4SE3
厂商: VISHAY SEMICONDUCTORS
元件分类: 桥式整流
英文描述: 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA
封装: LEAD FREE, MINIATURE, PLASTIC, MBS, 4 PIN
文件页数: 1/4页
文件大小: 194K
代理商: MB4SE3
MB2S, MB4S & MB6S
Document Number 88661
12-Jul-05
Vishay General Semiconductor
www.vishay.com
1
TO-269AA (MBS)
~
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifier
Major Ratings and Characteristics
IF(AV)
0.5 A
VRRM
200 V, 400 V, 600 V
IFSM
35 A
IR
5 A
VF
1.0 V
Tj max.
150 °C
Features
UL Recognition, file number E54214
Saves space on printed circuit boards
Ideal for automated placement
High surge current capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
General purpose use in ac-to-dc bridge full wave rec-
tification for Power Supply, Lighting Ballaster, Battery
Charger, Home Appliances, Office Equipment, and
Telecommunication applications
Mechanical Data
Case: TO-269AA (MBS)
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity: As marked on body
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
MB2S
MB4S
MB6S
Unit
Device marking code
2
4
6
Maximum repetitive peak reverse voltage
VRRM
200
400
600
V
Maximum RMS voltage
VRMS
140
280
420
V
Maximum DC blocking voltage
VDC
200
400
600
V
Maximum average forward output rectified current (see Fig. 1)
on glass-epoxy P.C.B.
on aluminum substrate
IF(AV)
0.5(1)
0.8(2)
A
Peak forward surge current 8.3 msec single half sine-wave
superimposed on rated load
IFSM
35
A
Rating for fusing (t < 8.3 ms)
I2t
5.0
A2sec
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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