- 您现在的位置：买卖IC网 > PDF目录53718 > MB6S-E3/45 (VISHAY SEMICONDUCTORS) 0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA PDF资料下载
参数资料
| 型号： | MB6S-E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 桥式整流 |
| 英文描述： | 0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA |
| 封装： | ROHS COMPLIANT, MINI, PLASTIC, MBS, 4 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 96K |
| 代理商： | MB6S-E3/45 |
MB2S, MB4S & MB6S
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88661
Revision: 01-Feb-08
2
Notes:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MB2S
MB4S
MB6S
UNIT
Maximum instantaneous
forward voltage drop per diode
0.4 A
VF
1.0
V
Maximum DC reverse current at rated
DC blocking voltage per diode
TA = 25 °C
TA = 125 °C
IR
5.0
100
A
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
13
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MB2S
MB4S
MB6S
UNIT
Typical thermal resistance
RθJA
RθJL
85 (1)
70 (2)
20 (1)
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MB2S-E3/45
0.22
45
100
Tube
MB2S-E3/80
0.22
80
3000
13" diameter paper tape and reel
Figure 1. Derating Curve for Output Rectified Current
0
20
40
60
80
100
120
140
160
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Aluminum Substrate
Glass
Epoxy
P.C.B.
Resistive or Inductive Load
A
v
er
age
F
o
rw
ard
Rectified
C
u
rrent
(A)
Ambient Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
1
10
100
0
5
10
15
20
25
30
35
f = 50 Hz
f = 60 Hz
T
A = 40 °C
Single Half Sine-Wave
Number of Cycles
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
1.0 Cycle
相关PDF资料 |
PDF描述 |
|---|---|
| MB6S-E3/80 | 0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA |
| MB84 | 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE |
| MB86 | 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| MB86970 | 2 CHANNEL(S), 10M bps, LOCAL AREA NETWORK CONTROLLER, PQFP16 |
| MBD101ZL1 | SILICON, UHF BAND, MIXER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MB6S-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Glass Passivated Bridge Rectifiers |
| MB6SRC | 制造商:Taiwan Semiconductor 功能描述:Bridge Rectifier Single 600V 0.8A TO269 |
| MB6S-TP | 功能描述:桥式整流器 .5A 600V RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| MB6STR | 功能描述:BRIDGE RECT 1P 600V 500MA MBS 制造商:smc diode solutions 系列:- 包装:剪切带（CT） 零件状态:在售 二极管类型:单相 技术:标准 电压 - 峰值反向（最大值）:600V 电流 - 平均整流（Io）:500mA 不同 If 时的电压 - 正向（Vf:1V @ 500mA 不同?Vr 时的电流 - 反向漏电流:5μA @ 600V 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:4-SMD，鸥翼型 供应商器件封装:MBS 标准包装:1 |
| MB6W | 制造商:SPC Multicomp 功能描述:BOX ABS WHITE 制造商:SPC Multicomp 功能描述:BOX, ABS, WHITE 制造商:SPC Multicomp 功能描述:ENCLOSURE, WALL MOUNT, PLASTIC, WHITE; Enclosure Type:Box; Enclosure Material:ABS; Body Color:White; External Height - Imperial:2.52"; External Height - Metric:64mm; External Width - Imperial:8.66"; External Width - Metric:220mm ;RoHS Compliant: Yes |
发布紧急采购，3分钟左右您将得到回复。