参数资料
型号: MB6S-E3
厂商: VISHAY SEMICONDUCTORS
元件分类: 桥式整流
英文描述: 0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA
封装: LEAD FREE, MINIATURE, PLASTIC, MBS, 4 PIN
文件页数: 3/4页
文件大小: 107K
代理商: MB6S-E3
MB2S, MB4S & MB6S
Vishay General Semiconductor
Document Number: 88661
Revision: 01-Feb-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Forward Voltage Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0.01
0.1
1
10
T
J = 150 °C
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
0
20
40
60
80
100
0.01
0.1
1
10
100
T
J = 125 °C
T
J = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(
A)
Figure 5. Typical Junction Capacitance Per Diode
0.1
1
10
100
0
5
10
15
20
25
30
1000
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.029 (0.74)
0.017 (0.43)
0 to 8°
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.058 (1.47)
0.054 (1.37)
0.252 (6.40)
0.272 (6.90)
0.106 (2.70)
0.090 (2.30)
0.0075 (0.19)
0.0065 (0.16)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0.144 (3.65)
0.161 (4.10)
0.205 (5.21)
0.195 (4.95)
0.114 (2.90)
0.094 (2.40)
0.038 (0.96)
0.019 (0.48)
0.272 MAX.
(6.91 MAX.)
0.030 MIN.
(0.76 MIN.)
0.023 MIN.
(0.58 MIN.)
0.105 (2.67)
0.095 (2.41)
TO-269AA (MBS)
Mounting Pad Layout
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