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参数资料
| 型号： | MB84VA2100-10 |
| 厂商： | FUJITSU LTD |
| 元件分类： | 存储器 |
| 英文描述： | 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA48 |
| 封装： | PLASTIC, FBGA-48 |
| 文件页数： | 11/29页 |
| 文件大小： | 400K |
| 代理商： | MB84VA2100-10 |
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11
MB84VA2100
-10
/MB84VA2101
-10
I
DC CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min.
Typ.
Max.
Unit
I
LI
Input Leakage Current
—
–1.0
—
+1.0
μ
A
μ
A
I
LO
Output Leakage Current
—
–1.0
—
+1.0
I
CC1
f
Flash V
CC
Active Current
(Read)
V
CC
f = V
CC
Max., CEf = V
IL
OE = V
IH
t
CYCLE
= 10 MHz
—
—
30
mA
t
CYCLE
= 5 MHz
—
—
15
I
CC2
f
Flash V
CC
Active Current
(Program/Erase)
V
CC
f = V
CC
Max., CEf = V
IL
, OE = V
IH
—
—
35
mA
I
CC1
s
SRAM V
CC
Active
Current
V
CC
s = V
CC
Max.,
CE1s = V
IL
, CE2s = V
IH
tt
CYCLE
=10 MHz
—
—
40
mA
t
CYCLE
= 1 MHz
—
—
12
mA
I
CC2
s
SRAM V
CC
Active
Current
CE1s = 0.2 V,
CE2s = V
CC
s – 0.2 V,
WE = V
CC
s – 0.2 V
t
CYCLE
= 10 MHz
—
—
35
mA
t
CYCLE
= 1 MHz
—
—
6
mA
I
SB1
f
Flash V
CC
Standby
Current
V
CC
f = V
CC
Max., CEf = V
CC
f ± 0.3 V
RESET = V
CC
f ± 0.3 V
—
—
5
μ
A
I
SB2
f
Flash V
CC
Standby
Current (RESET)
V
CC
f = V
CC
Max., RESET = V
SS
± 0.3 V
—
—
5
μ
A
I
SB1
s
SRAM V
CC
Standby
Current
CE1s = V
IH
or CE2s = V
IL
—
—
2
mA
I
SB2
s**
SRAM V
CC
Standby
Current
CE1s = V
CC
–
0.2 V or CE2s
= 0.2 V
V
CC
s =
3.0 V
±10%
T
A
= 25°C
—
1
2.5
μ
A
T
A
= –20 to
+85°C
—
—
55
μ
A
V
CC
s =
3.3 V
±0.3 V
T
A
= 25°C
—
1.5
3
μ
A
T
A
= –20 to
+85°C
—
—
60
μ
A
V
CC
s =
3.0 V
T
A
= 25°C
—
1
2
μ
A
T
A
= –20 to
+40°C
—
—
5
μ
A
T
A
= –20 to
+85°C
—
—
50
μ
A
V
IL
Input Low Level
—
–0.3
—
0.6
V
V
IH
Input High Level
—
2.2
—
V
CC
+0.3*
V
V
OL
Output Low Voltage
Level
I
OL
= 2.1 mA,
V
CC
f = V
CC
s = V
CC
Min.
—
—
0.4
V
V
OH
Output High Voltage
Level
I
OH
= –500
μ
A,
V
CC
f = V
CC
s = V
CC
Min.
V
CC
– 0.5
—
—
V
V
LKO
Flash Low V
CC
Lock-Out
Voltage
—
2.3
—
2.5
V
* : V
CC
indicate lower of V
CC
f or V
CC
s
** :During standby mode with CE1s =
V
CCS
– 0.2 V, CE2s should be CE2s < 0.2V or CE2s >
V
CCS
– 0.2V
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