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参数资料
| 型号： | MB84VD21082 |
| 厂商： | Fujitsu Limited |
| 英文描述： | 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
| 中文描述： | 1,600（x8/x16）闪存 |
| 文件页数： | 2/55页 |
| 文件大小： | 850K |
| 代理商： | MB84VD21082 |
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MB84VD2108X
-85
/MB84VD2109X
-85
2
(Continued)
1.
FLASH MEMORY
Simultaneous Read/Write operations (dual bank)
Miltiple devices available with different bank sizes
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
Minimum 100,000 write/erase cycles
Sector erase architecture
Eight 4 K words and thirty one 32 K words.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
MB84VD2108X : Top sector
MB84VD2109X : Bottom sector
Embedded Erase
TM
* Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
* Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low V
CC
f write inhibit
≤
2.5 V
Hidden ROM (Hi-ROM) region
64K byte of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
WP/ACC input pin
At V
IL
, allows protection of boot sectors, regardless of sector protection/unprotection status
(MB84VD2108X : SA37, SA38 MB84VD2109X : SA0, SA1)
At V
IH
, allows removal of boot sector protection
At V
ACC
, program time will reduse by 40%.
Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
Please refer to “MBM29DL16XTD/BD” data sheet in detailed function
2.
SRAM
Power dissipation
Operating: 50 mA max.
Standby: 7
μ
A max.
Power down features using CE1s and CE2s
Data retention supply voltage : 1.5 V to 3.6 V
CE1s and CE2s Chip Select
Byte data control : LBs (DQ
0
to DQ
7
) , UBs (DQ
8
to DQ
15
)
* :
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相关PDF资料 |
PDF描述 |
|---|---|
| MB84VD21082-85-PBS | 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
| MB84VD21082-85-PTS | 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
| MB84VD21083 | 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
| MB84VD21084 | 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
| MB84VD2108X | 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MB84VD21082-85-PBS | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
| MB84VD21082-85-PTS | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
| MB84VD21082EM-70PBS | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
| MB84VD21083 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
| MB84VD21083-85-PBS | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
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