参数资料
型号: MB85RS128APNF-G-JNE1
厂商: Fujitsu Semiconductor America Inc
文件页数: 1/20页
文件大小: 0K
描述: IC FRAM 128KBIT 25MHZ 8SOP
特色产品: FRAM (Ferroelectric RAM)
标准包装: 1,500
格式 - 存储器: RAM
存储器类型: FRAM(Ferroelectric RAM)
存储容量: 128K (16K x 8)
速度: 25MHz
接口: SPI 串行
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 托盘
其它名称: 865-1176
FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00008-0v01-E
Memory FRAM
128K (16 K × 8) Bit SPI
MB85RS128A
■ DESCRIPTION
MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384
words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
MB85RS128A adopts the Serial Peripheral Interface (SPI).
The MB85RS128A is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS128A can be used for 10 10 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E 2 PROM.
MB85RS128A does not take long time to write data unlike Flash memories nor E 2 PROM, and MB85RS128A
takes no wait time.
■ FEATURES
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Bit configuration
Operating power supply voltage
Operating frequency
Serial Peripheral Interface
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16,384 words × 8 bits
3.0 V to 3.6 V
25 MHz (Max)
SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
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Operating temperature range
Data retention
High endurance
Package
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? 40 ° C to + 85 ° C
10 years ( + 55 ° C)
10 Billion Read/writes
8-pin plastic SOP (FPT-8P-M02)
Copyright?2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2011.6
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