参数资料
型号: MB89F202RAYPFV
厂商: FUJITSU LTD
元件分类: 微控制器/微处理器
英文描述: 8-BIT, MROM, 12.5 MHz, MICROCONTROLLER, PDSO34
封装: 6.10 X 11 MM, 1.45 MM HEIGHT, 0.65 MM PITCH, PLASTIC, SSOP-34
文件页数: 17/48页
文件大小: 1266K
代理商: MB89F202RAYPFV
MB89202R Series
24
DS07-12562-3E
2.
Recommended Operating Conditions
(Vss = 0.0 V)
* : RST acts as high voltage supply for the flash memory during program and erase on MB89F202RA/F202RAY.
It can tolerate high voltage input. Please check section “6. Flash Memory Program/Erase Characteristics”.
Parameter
Symbol
Value
Unit
Remarks
Min
Max
Power supply voltage
VCC
2.2
5.5
V
MB89202/202Y
3.5
5.5
V
MB89F202RA/F202RAY
2.7
5.5
V
MB89V201
1.5
5.5
V
Retains the RAM state in stop mode
“H” level input voltage
VIH
0.7 VCC
VCC
+ 0.3
V
P00 to P07, P31, P37, P40 to P43, P50,
P61,P70 to P72
VIHS
0.8 VCC
VCC
+ 0.3
V
EC, INT20 to INT27, UCK/SCK,
INT10 to INT12, P30, P32 to P36, UI/SI
VIHH
0.7 VCC
12.25
V
P60. Under the normal operation, VIHH
should not exceed Vcc
+ 0.3 V. Setting of
VIHH
> Vcc + 0.3 V is a reserved mode.
VIHHS
0.8 VCC
12.25
V
RST*
“L” level input voltage
VIL
VSS
0.3
0.3 VCC
V
P00 to P07, P31, P37, P40 to P43, P50,
P60, P61, P70 to P72
VILS
VSS
0.3
0.2 VCC
V
RST, EC, INT20 to INT27, UCK/SCK,
INT10 to INT12, P30, P32 to P36, UI/SI
Open-drain output pin
application voltage
VD
VSS
0.3
VCC
+ 0.3
V
P40 to P43, RST
Operating temperature
Ta
40
+85
°C
Room temperature is recommended for
programming the flash memory on
MB89F202RA/F202RAY
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