参数资料
型号: MB89F538L-201PV4
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 12.5 MHz, MICROCONTROLLER, PQCC64
封装: 9 X 9 MM, 0.80 MM HEIGHT, 0.50 MM PITCH, PLASTIC, BCC-64
文件页数: 11/65页
文件大小: 1294K
代理商: MB89F538L-201PV4
MB89530 Series
19
■ PROGRAMMING AND ERASING FLASH MEMORY ON THE MB89F538L
1.
Flash Memory
The flash memory is located between 4000H and FFFFH in the CPU memory map and incorporates a flash
memory interface circuit that allows read access and program access from the CPU to be performed in the same
way as mask ROM. Programming and erasing flash memory is also performed via the flash memory interface
circuit by executing instructions in the CPU. This enables the flash memory to be updated in place under the
control of the CPU, providing an efficient method of updating program and data.
2.
Flash Memory Features
48 K byte
×8-bit configuration : (16 K+8 K+8 K+16 K sectors)
Automatic programming algorithm (Embedded algorithm* : Equivalent to MBM29LV200)
Includes an erase pause and restart function
Data polling and toggle bit for detection of program/erase completion
Detection of program/erase completion via CPU interrupt
Compatible with JEDEC-standard commands
Sector Erasing (sectors can be combined in any combination)
No. of program/erase cycles : 10,000 (Min)
* : Embedded Algorithm is a trademark of Advanced Micro Devices.
3.
Procedure for Programming and Erasing Flash Memory
Programming and reading flash memory cannot be performed at the same time. Accordingly, to program or
erase flash memory, the program must first be copied from flash memory to RAM so that programming can be
performed without program access from flash memory.
4.
Flash Memory Register
FLASH control status register (FMCS)
Address
Initial value
007AH
000X00-0B
RDYINT
INTE
WE
RDY
bit7
bit0
bit1
bit2
bit3
bit4
bit5
bit6
R/W
R
R/W
Re-
served
Re-
served
Re-
served
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