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参数资料
| 型号： | MB9AF115NPMC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | RISC MICROCONTROLLER, PQFP100 |
| 封装： | 0.50 MM PITCH, PLASTIC, LQFP-100 |
| 文件页数： | 60/112页 |
| 文件大小： | 1225K |
| 代理商： | MB9AF115NPMC |
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51
FUJITSU SEMICONDUCTOR CONFIDENTIAL
r1.0
MB9A110 Series
DS706-00011-1v0-E
C Pin
As this series includes an internal regulator, always connect a bypass capacitor of approximately 4.7 F to
the C pin for use by the regulator.
Mode pins (MD0)
Connect the MD pin (MD0) directly to VCC or VSS pins. Design the printed circuit board such that the
pull-up/down resistance stays low, as well as the distance between the mode pins and VCC pins or VSS pins
is as short as possible and the connection impedance is low, when the pins are pulled-up/down such as for
switching the pin level and rewriting the Flash memory data. It is because of preventing the device
erroneously switching to test mode due to noise.
Notes on power-on
Turn power on/off in the following order or at the same time.
If not using the A/D converter, connect AVCC =VCC and AVSS = VSS.
Turning on : VCC → AVCC → AVRH
Turning off : AVRH → AVCC → VCC
Serial Communication
There is a possibility to receive wrong data due to the noise or other causes on the serial communication.
Therefore, design a printed circuit board so as to avoid noise.
Consider the case of receiving wrong data due to noise, perform error detection such as by applying a
checksum of data at the end. If an error is detected, retransmit the data.
Differences in features among the products with different memory sizes and
between Flash products and MASK products
The electric characteristics including power consumption, ESD, latch-up, noise characteristics, and
oscillation characteristics among the products with different memory sizes and between Flash products and
MASK products are different because chip layout and memory structures are different.
If you are switching to use a different product of the same series, please make sure to evaluate the electric
characteristics.
Device
C
VSS
4.7μF
GND
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MB9AF116MAPMC-G-JNE2 | 制造商:Fujitsu 功能描述:Bulk |
| MB9AF116NAPMC-G-JNE2 | 制造商:Fujitsu 功能描述:Bulk |
| MB9AF132KAPMC-G-SNE2 | 制造商:Fujitsu 功能描述:Bulk |
| MB9AF132KBPMC-G-SNE2 | 功能描述:IC MCU 32BIT 128KB FLASH 48LQFP 制造商:cypress semiconductor corp 系列:FM3 MB9A130LB 包装:托盘 零件状态:在售 核心处理器:ARM? Cortex?-M3 核心尺寸:32-位 速度:20MHz 连接性:CSIO，I2C，UART/USART 外设:LVD，POR，PWM，WDT I/O 数:37 程序存储容量:128KB（128K x 8） 程序存储器类型:闪存 EEPROM 容量:- RAM 容量:8K x 8 电压 - 电源（Vcc/Vdd）:1.8 V ~ 5.5 V 数据转换器:A/D 6x12b 振荡器类型:内部 工作温度:-40°C ~ 85°C（TA） 封装/外壳:48-LQFP 供应商器件封装:48-LQFP（7x7） 标准包装:250 |
| MB9AF132KBQN-G-AVE2 | 功能描述:ARM? Cortex?-M3 FM3 MB9A130LB Microcontroller IC 32-Bit 20MHz 128KB (128K x 8) FLASH 48-QFN (7x7) 制造商:cypress semiconductor corp 系列:FM3 MB9A130LB 包装:托盘 零件状态:有效 核心处理器:ARM? Cortex?-M3 核心尺寸:32-位 速度:20MHz 连接性:CSIO，I2C，UART/USART 外设:LVD，POR，PWM，WDT I/O 数:37 程序存储容量:128KB（128K x 8） 程序存储器类型:闪存 EEPROM 容量:- RAM 容量:8K x 8 电压 - 电源（Vcc/Vdd）:1.8 V ~ 5.5 V 数据转换器:A/D 6x12b 振荡器类型:内部 工作温度:-40°C ~ 85°C（TA） 封装/外壳:48-VFQFN 裸露焊盘 供应商器件封装:48-QFN（7x7） 标准包装:260 |
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