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参数资料
| 型号： | MBB200GS6AW |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 200 A, 600 V, N-CHANNEL IGBT |
| 文件页数： | 3/4页 |
| 文件大小： | 120K |
| 代理商： | MBB200GS6AW |
1.5
1
0.5
0
50
150
100
200
250
TYPICAL
Switching
Time
,t
(
m
s)
Collector Current, IC (A)
Switching time vs. Collector current
10
15
20
5
0
50
150
100
200
250
Switching
Loss
,Et
on
,Et
off
,E
rr
(mJ/pulse)
Collector Current, IC (A)
Switching loss vs. Collector current
10
1
0.1
1
10
100
Switching
Time
,t
(
m
s)
Gate Resistance, RG (
W)
Switching time vs. Gate resistance
tr
tf
ton
toff
VCC
=300V
VGE
=±15V
IC
=200A
TC
=25°C
Resistive Load
TYPICAL
100
10
1
10
100
Switching
Loss
,Et
on
,Et
off
(mJ/pulse)
Gate Resistance, RG (
W)
Switching loss vs. Gate resistance
VCC
=300V
VGE
=±15V
IC
=200A
TC
=125°C
Inductive Load
Err
Etoff
Vcc
=300V
VGE
=±15V
RG
=12W
TC
=125°C
Inductive Load
1000
100
10
1
0.1
0
200
400
600
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
Etoff
Eton
1
0.1
0.01
0.001
0.01
0.1
1
10
T
ransient
Ther
mal
Impedance
,R
th(j-c)
(
°C/W)
Time, t (s)
Transient thermal impedance
Diode
IGBT
VGE
=±15V
RG
=12W
TC
125°C
PDE-B200GS6AW-0
tf
tr
ton
toff
Eton
Vcc
=300V
VGE
=±15V
RG
=12W
TC
=25°C
Resistive Load
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