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参数资料
| 型号： | MBC13900 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN Silicon Low Noise Transistor |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 1/26页 |
| 文件大小： | 813K |
| 代理商： | MBC13900 |
MBC13900
Ordering Information
Device
Marking
Package
MBC13900T1
900
SOT-343
Package Information
Plastic Package
Case 318M
(SOT-343)
(Scale 2:1)
Definitive Data:
Motorola reserves the right to change the Production detail specifications as may be required to
permit improvements in the design of its product. Motorola, Inc., 2002. All rights reserved.
For More Information On This Product,
Go to: www.freescale.com
The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz f
τ
bipolar IC process. It is housed in the 4-lead SC-70 (SOT-343) surface mount plastic package
resulting in a parasitic effect reduction and RF performance enhancements. The high
performance at low power makes the MBC13900 suitable for front-end applications in
portable wireless systems such as pagers, cellular and cordless phones.
Low Noise Figure, NF
min
= 0.8 dB (Typ) @ 0.9 GHz, 2.0 V and 5.0 mA
Maximum Stable Gain, 22 dB @ 0.9 GHz, 2.0 V and 5.0 mA
Output Third Order Intercept, OIP3 = 18 dBm (Typ) @ 2.0 V and
5.0 mA
Ultra small SOT-343 Surface Mount Package
Available Only in Tape and Reel Packaging
Figure 1. Pin Connections
4
1
3
2
Base
Emitter
Collector
Emitter
Technical Data
MBC13900/D
Rev. 0, 06/2002
NPN Silicon
Low Noise Transistor
F
Freescale Semiconductor, Inc.
n
.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBC13900/D | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN Silicon Low Noise Transistor |
| MBC13900NT1 | 功能描述:两极晶体管 - BJT DISCRETE BJT PB FREE RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MBC13900T1 | 功能描述:IC TRANS NPN RF LOW NOISE SC70-4 RoHS:否 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
| MBC13901 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:NPN Silicon Low Noise Transistor |
| MBC13916 | 制造商:Freescale Semiconductor 功能描述:GAIN BLOCK 制造商:Freescale 功能描述:RF Amp Chip Single GP 2.5GHz 5V 4-Pin(3+Tab) SOT-343R |
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