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参数资料
| 型号： | MBC13900T1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PLASTIC, CASE 318M-01, SC-70, 4 PIN |
| 文件页数： | 3/24页 |
| 文件大小： | 691K |
| 代理商： | MBC13900T1 |
Applications Information
MBC13900 Technical Data, Rev. 1.1
Freescale Semiconductor
11
5.2
1900 MHz LNA
design goals for the circuit are:
NF < 1.35 dB
Gain > 14 dB
Return Loss > 10 dB, input and output
Unconditional stability from 100 MHz to 6 GHz.
Typical performance that can be expected from this circuit at 3.0 V VCC and 5.0 mA is listed in Table 6.
The component values can be changed to enhance the performance of a particular parameter but usually
at the expense of another. Gain can be improved by sacrificing stability (R3 and R5). Input return loss can
be sacrificed to improve noise figure. Input return loss can be improved at the expense of noise figure (C3,
C7, L4). IIP3 can be improved by increasing emitter degeneration (L3) and bias current (R2). Unused
traces are available on the PCB to add emitter degeneration at leads 1 and 3 of the device.
Figure 20. 1900 MHz LNA Schematic
C3
L1
R4
R3
C2
C4
V
CC
C1
R1
R2
RF In
RF Out
R5
L2
L4
C7
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