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参数资料
| 型号： | MBD101G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, UHF BAND, MIXER DIODE, TO-92 |
| 封装： | LEAD FREE, PLASTIC, CASE 182-06, TO-226AC, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 59K |
| 代理商： | MBD101G |
Semiconductor Components Industries, LLC, 2007
March, 2007 Rev. 3
1
Publication Order Number:
MBD101/D
MBD101, MMBD101LT1
Preferred Device
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for
use in detector and ultrafast switching circuits. Supplied in an
inexpensive plastic package for lowcost, highvolume consumer
requirements. Also available in Surface Mount package.
Features
Low Noise Figure 6.0 dB Typ @ 1.0 GHz
Very Low Capacitance Less Than 1.0 pF
High Forward Conductance 0.5 V (Typ) @ IF = 10 mA
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
7.0
V
Forward Power Dissipation
TA = 25°C
MBD101
MMBD101LT1
Derate above 25
°C
MBD101
MMBD101LT1
PF
280
225
2.2
1.8
mW
mW/
°C
Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
7.0
10
V
Diode Capacitance
(VR = 0, f = 1.0 MHz,
Note 1, page 2)
CD
0.88
1.0
pF
Forward Voltage
(IF = 10 mA)
VF
0.5
0.6
V
Reverse Leakage
(VR = 3.0 V)
IR
0.02
0.25
mA
http://onsemi.com
SOT23 (TO236)
CASE 318
STYLE 8
Preferred devices are recommended choices for future use
and best overall value.
1
2
3
Device
Package
Shipping
ORDERING INFORMATION
MBD101
TO92
5000 Units / Box
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MBD101G
TO92
(PbFree)
5000 Units / Box
MMBD101LT1
SOT23
3000 / Tape & Reel
MMBD101LT1G
SOT23
(PbFree)
3000 / Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
4M M
G
A
= Assembly Location
Y
= Year
WW = Work Week
4M
= Device Code (SOT23)
M
= Date Code*
G
= PbFree Package
(Note: Microdot may be in either location)
MARKING
DIAGRAMS
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
(Pin 2 Not Connected)
TO92 2Lead
CASE 182
STYLE 1
1
2
SILICON SCHOTTKY
BARRIER DIODES
MBD
101
AYWW
G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBD110DWT1 | 功能描述:肖特基二极管与整流器 7V 120mW Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBD110DWT1_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD110DWT1G | 功能描述:肖特基二极管与整流器 7V 120mW Dual Isolated RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBD110DWT1G_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD110DWT1G_12 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
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