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参数资料
| 型号： | MBD110DWT1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Dual Schottky Barrier Diodes |
| 中文描述： | SILICON, VHF-UHF BAND, MIXER DIODE |
| 文件页数： | 3/8页 |
| 文件大小： | 180K |
| 代理商： | MBD110DWT1 |
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
MBD110DWT1
Figure 1. Reverse Leakage
TA, AMBIENT TEMPERATURE (
°
C)
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Noise Figure
PLO, LOCAL OSCILLATOR POWER (mW)
C
N
,
I
,
I
0.1
0.2
0.5
1.0
2.0
5.0
10
11
10
9
8
7
6
5
4
3
2
1
0
1.0
2.0
3.0
4.0
1.0
0.9
0.8
0.7
0.6
0.3
0.4
0.5
0.6
100
10
1.0
0.1
0.7
0.8
30
40
50
60
70
80
100
1.0
0.7
0.5
130
110
120
90
0.2
0.1
0.07
0.05
0.02
0.01
Figure 5. Noise Figure Test Circuit
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
NOISE
FIGURE METER
H.P. 342A
DIODE IN
TUNED
MOUNT
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
VR = 3.0 Vdc
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(Test Circuit Figure 5)
TA = –40
°
C
TA = 85
°
C
TA = 25
°
C
Note 3 – LS is measured on a package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
Note 1 – CC and CT are measured using a capacitance
bridge (Boonton Electronics Model 75A or equiva-
lent).
Note 2 – Noise figure measured with diode under test in
tuned diode mount using UHF noise source and lo-
cal oscillator (LO) frequency of 1.0 GHz. The LO
power is adjusted for 1.0 mW. IF amplifier NF = 1.5
dB, f = 30 MHz, see Figure 5.
NOTES ON TESTING AND SPECIFICATIONS
MBD110DWT1
MBD110DWT1
MBD110DWT1
MBD110DWT1
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相关代理商/技术参数 |
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| MBD110DWT1_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
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| MBD110DWT1G_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD110DWT1G_12 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
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