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参数资料
| 型号： | MBD301 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES |
| 中文描述： | SILICON, VHF-UHF BAND, MIXER DIODE, TO-92 |
| 封装： | PLASTIC, CASE 182-06, TO-226AC, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 130K |
| 代理商： | MBD301 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
Schottky Barrier Diodes
These devices are designed primarily for high–efficiency UHF and VHF detector
applications. They are readily adaptable to many other fast switching RF and digital
applications. They are supplied in an inexpensive plastic package for low–cost,
high–volume consumer and industrial/commercial requirements. They are also
available in a Surface Mount package.
The Schottky Barrier Construction Provides Ultra–Stable Characteristics by
Eliminating the “Cat–Whisker” or “S–Bend” Contact
Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301
MAXIMUM RATINGS
(TJ = 125
°
C unless otherwise noted)
MBD301
MMBD301LT1
Rating
Symbol
Value
Unit
Reverse Voltage
VR
PF
30
Volts
Forward Power Dissipation
@ TA = 25
°
C
Derate above 25
°
C
280
2.8
200
2.0
mW
mW/
°
C
Operating Junction
Temperature Range
TJ
–55 to +125
°
C
Storage Temperature Range
Tstg
–55 to +150
°
C
DEVICE MARKING
MMBD301LT1 = 4T
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (IR = 10
μ
A)
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1
Minority Carrier Lifetime (IF = 5.0 mA, Krakauer Method) Figure 2
Reverse Leakage (VR = 25 V) Figure 3
Forward Voltage (IF = 1.0 mAdc) Figure 4
Forward Voltage (IF = 10 mAdc) Figure 4
V(BR)R
CT
30
—
—
Volts
—
0.9
1.5
pF
—
15
—
ps
IR
VF
VF
—
13
200
nAdc
—
0.38
0.45
Vdc
—
0.52
0.6
Vdc
NOTE: MMBD301LT1 is also available in bulk packaging. Use MMBD301L as the device title to order this device in bulk.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MBD301/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
CASE 182–02, STYLE 1
(TO–226AC)
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
1
2
3
1
2
3
CATHODE
1
ANODE
30 VOLTS
SILICON HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
2
CATHODE
1
ANODE
相关PDF资料 |
PDF描述 |
|---|---|
| MBD301LT1 | 30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
| MBD301 | Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
| MBD701 | 70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
| MBD701LT1 | 70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
| MBD701 | Silicon Hot-Carrier Diodes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBD301_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes |
| MBD301G | 功能描述:肖特基二极管与整流器 30V 200mW RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBD301G | 制造商:ON Semiconductor 功能描述:Small Signal Diode 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER, 10mA, 30V TO-92 |
| MBD301LT1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
| MBD330D | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:Dual Schottky Barrier Diodes |
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