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参数资料
| 型号： | MBD54DWT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Dual Schottky Barrier Diodes |
| 中文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封装： | MINIATURE, CASE 419B-02, SC-88, SC-70, 6 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 85K |
| 代理商： | MBD54DWT1 |
5–1
Motorola, Inc. 1997
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage — 0.35 V @ IF = 10 mAdc
MAXIMUM RATINGS
(TJ = 125
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
PF
30
Volts
Forward Power Dissipation
@ TA = 25
°
C
Derate above 25
°
C
150
1.2
mW
mW/
°
C
Forward Current (DC)
IF
TJ
Tstg
200 Max
mA
Junction Temperature
125 Max
°
C
Storage Temperature Range
–55 to +150
°
C
DEVICE MARKING
MBD54DWT1 = BL
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (IR = 10
μ
A)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
V(BR)R
CT
IR
VF
VF
VF
trr
30
—
—
Volts
—
7.6
10
pF
—
0.5
2.0
μ
Adc
—
0.22
0.24
Vdc
—
0.41
0.5
Vdc
—
0.52
1.0
Vdc
—
—
5.0
ns
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
VF
VF
IF
IFRM
IFSM
—
0.29
0.32
Vdc
—
0.35
0.40
Vdc
—
—
200
mAdc
Repetitive Peak Forward Current
—
—
300
mAdc
Non–Repetitive Peak Forward Current (t < 1.0 s)
—
—
600
mAdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
REV 3
Order this document
by MBD54DWT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 419B–01, STYLE 6
SOT–363
30 VOLTS
DUAL HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
123
654
Anode 1
6 Cathode
Cathode 3
4 Anode
N/C 2
5 N/C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBD54DWT1D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD54DWT1G | 功能描述:肖特基二极管与整流器 30V 150mW Dual Isolated RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBD54DWT1G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| MBD54DWT1G_09 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD5A | 功能描述:基本/快动开关 SPST-NO OFF-MOM 10A 250VAC 274gf RoHS:否 制造商:Omron Electronics 触点形式:SPDT 执行器:Lever 电流额定值:5 A 电压额定值 AC:250 V 电压额定值 DC:30 V 功率额定值: 工作力:120 g IP 等级:IP 67 NEMA 额定值: 端接类型:Wire 安装:Panel |
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