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参数资料
| 型号： | MBD701G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 132K |
| 描述： | DIODE SCHOTTKY DET/SW 70V TO92-2 |
| 产品变化通告： | Product Discontinuation 03/Oct/2007 |
| 标准包装： | 5,000 |
| 二极管类型： | 肖特基 - 单 |
| 电压 - 峰值反向(最大)： | 70V |
| 电容@ Vr, F： | 1pF @ 20V，1MHz |
| 功率耗散（最大）： | 280mW |
| 封装/外壳： | TO-226-2，TO-92-2（TO-226AC） |
| 供应商设备封装： | TO-92 |
| 包装： | 散装 |
| 其它名称： | MBD701GOS |
?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 6
1
Publication Order Number:
MBD701/D
MBD701,
MMBD701L,
SMMBD701L
Preferred Device
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high?efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low?cost, high?volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
?
Extremely Low Minority Carrier Lifetime ?
15 ps (Typ)
?
Very Low Capacitance ?
1.0 pF @ V
R
= 20 V
?
High Reverse Voltage ?
to 70 V
?
Low Reverse Leakage ?
200 nA (Max)
?
AEC Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
Pb?Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
V
Forward Power Dissipation
@ TA
= 25
?C
MBD701
MMBD701L, SMMBD701L
Derate above 25?C
MBD701
MMBD701L, SMMBD701L
PF
280
200
2.8
2.0
mW
mW/?C
Operating Junction Temperature
Range
TJ
?55 to +125
?C
Storage Temperature Range
Tstg
?55 to +150
?C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
http://onsemi.com
SOT?23 (TO?236)
CASE 318
STYLE 8
Preferred
devices are recommended choices for future use
and best overall value.
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
1
5H M
A = Assembly Location
Y = Year
WW = Work Week
5H = Device Code (SOT?23)
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAMS
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
TO?92 2?Lead
CASE 182
STYLE 1
MBD
701
AYWW
SOT?23
TO?92
SOT?23
TO?92
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBD701G | 制造商:ON Semiconductor 功能描述:Small Signal Diode |
| MBD701LT1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
| MBD770DWT1 | 功能描述:肖特基二极管与整流器 70V 120mW Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBD770DWT1G | 功能描述:肖特基二极管与整流器 70V 120mW Dual Isolated RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBD-902-AL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
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