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参数资料
| 型号： | MBD770DWT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Dual Schottky Barrier Diodes |
| 中文描述： | SILICON, VHF-UHF BAND, MIXER DIODE |
| 封装： | CASE 419B-02, SC-88, SC-70, 6 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 180K |
| 代理商： | MBD770DWT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Application circuit designs are moving toward the consolidation of device count and
into smaller packages. The new SOT–363 package is a solution which simplifies
circuit design, reduces device count, and reduces board space by putting two discrete
devices in one small six–leaded package. The SOT–363 is ideal for low–power
surface mount applications where board space is at a premium, such as portable
products.
Surface Mount Comparisons:
SOT–363
SOT–23
Area (mm2)
Max Package PD (mW)
Device Count
4.6
120
2
7.6
225
1
Space Savings:
Package
1
SOT–23
2
SOT–23
SOT–363
40%
70%
The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our
popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They
are designed for high–efficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MBD110DWT1
MBD330DWT1
MBD770DWT1
VR
7.0
30
70
Vdc
Forward Power Dissipation
TA = 25
°
C
PF
120
mW
Junction Temperature
TJ
Tstg
–55 to +125
°
C
Storage Temperature Range
–55 to +150
°
C
DEVICE MARKING
MBD110DWT1 = M4
MBD330DWT1 = T4
MBD770DWT1 = H5
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MBD110DWT1/D
SEMICONDUCTOR TECHNICAL DATA
CASE 419B–01, STYLE 6
SOT–363
123
654
Motorola Preferred Devices
相关PDF资料 |
PDF描述 |
|---|---|
| MBD330D | Dual Schottky Barrier Diodes |
| MBD110DWT1 | Dual Schottky Barrier Diodes |
| MBD330DWT1 | Dual Schottky Barrier Diodes |
| MBD110DWT1 | Dual SCHOTTKY Barrier Diodes |
| MBD770DWT1 | Dual SCHOTTKY Barrier Diodes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBD770DWT1G | 功能描述:肖特基二极管与整流器 70V 120mW Dual Isolated RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBD-902-AL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
| MBD-902-CL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
| MBD-902-XL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
| MBD-A1SAM-2750F-B | 制造商:Supermicro Computer Inc 功能描述:INTEL MOTHERBOARD - Trays |
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