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参数资料
| 型号： | MBM29DL161BE-70TR-E1 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封装： | PLASTIC, REVERSE, TSOP1-48 |
| 文件页数： | 45/80页 |
| 文件大小： | 613K |
| 代理商： | MBM29DL161BE-70TR-E1 |
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Retired Product DS05-20880-5E_July 13, 2007
MBM29DL16XTE/BE70/90
5
(Continued)
Single 3.0 V read, program, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP(1) (Package suffix: TN – Normal Bend Type, TR – Reversed Bend Type)
48-pin FBGA (Package suffix: PBT)
Minimum 100,000 program/erase cycles
High performance
70 ns maximum access time
Sector erase architecture
Eight 4K word and thirty one 32K word sectors in word mode
Eight 8K byte and thirty one 64K byte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
HiddenROM region
64K byte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
WP/ACC input pin
At VIL, allows protection of boot sectors, regardless of sector group protection/unprotection status
At VACC, increases program performance
Embedded EraseTM* Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded ProgramTM* Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low VCC write inhibit
≤ 2.5 V
Program Suspend/Resume
Suspends the program operation to allow a read in another sector with in the same device
Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
Sector group protection
Hardware method disables any combination of sector groups from program or erase operations
Sector Group Protection Set function by Extended sector group protection command
Fast Programming Function by Extended Command
Temporary sector group unprotection
Temporary sector group unprotection via the RESET pin.
In accordance with CFI (Common Flash Memory Interface)
*: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBM29DL161BE-90 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL161BE-90PBT | 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL161BE-90TN | 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL161BE-90TR | 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL161TD | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (2M x 8/1M x 16) BIT Dual Operation |
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