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参数资料
| 型号： | MBN1200GR12A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 1200 A, 1200 V, N-CHANNEL IGBT |
| 文件页数： | 1/4页 |
| 文件大小： | 123K |
| 代理商： | MBN1200GR12A |
Hitachi IGBT Module / Silicon N-Channel IGBT
MBN1200GR12A
PDE-N1200GR12A-0
[Rated 1200A/1200V, Single-pack type]
FEATURES
OUTLINE DRAWING
E
G
C
44
37
(8)
130
27.5
19.5
46.75
110
19
13
30
36
2-M4
4-
φ6.5
2-M8
WeightF 1300g
Unit in mm
Low saturation voltage and high speed.
Low turn-OFF switching loss.
Low noise due to built-in free-wheeling diode.
(Ultra Soft and Fast recovery Diode (USFD))
High reliability structure.
Isolated heat sink (terminals to base).
CIRCUIT DIAGRAM
G
E
C
ABSOLUTE MAXIMUM RATINGS (TC=25°C)
Item
Symbol
Unit
Value
Collector-Emitter Voltage
VCES
V
1200
Gate-Emitter Voltage
VGES
V
±20
DC
IC
1200
Collector Current
1ms
ICP
A
2400
DC
IF
1200
*1
Forward Current
1ms
IFM
A
2400
Collector Power Dissipation
PC
W
8330
Junction Temperature
Tj
°C
-40 ~ +150
Storage Temperature
Tstg
°C
-40 ~ +125
Isolation Voltage
Viso
VRMS
2500(AC 1 minute)
Terminals(M4/M8)
1.37 / 7.84
*2
Screw Torque
Mounting
-
Nm
2.94
*3
Notes; *1 : RMS current of diode
≤ 360 Arms
*2 : Recommended value 1.18 / 7.35 Nm
*3 : Recommended value 2.45 Nm
CHARACTERISTICS (TC=25°C)
Item
Symbol
Unit
Min.
Typ.
Max.
Test Conditions
Collector-Emitter Cut-Off Current
ICES
mA
-
1.0
VCE=1200V, VGE=0V
Gate-Emitter Leakage Current
IGES
nA
-
±500
VGE=±20V, VCE=0V
Collector-Emitter Saturation Voltage
VCE(sat)
V
-
2.4
3.0
IC=1200A, VGE=15V
Gate-Emitter Threshold Voltage
VGE(TO)
V
-
10
VCE=5V, IC=1200mA
Input Capacitance
Cies
nF
-
108
-
VCE=10V, VGE=0V, f=1MHz
Rise Time
tr
-
0.6
1.5
Turn-On Time
ton
-
0.8
2.1
Fall Time
tf
-
0.2
0.4
Switching Times
Turn-Off Time
toff
s
-
1.4
1.8
VCC=600V, IC=1200A
RG=3.3
*4
VGE=±15V
Inductive Load
Peak Forward Voltage Drop
VFM
V
-
2.5
3.7
IF=1200A, VGE=0V
Reverse Recovery Time
trr
s
-
0.5
IF=1200A, VGE=-10V,di/dt=1200A/s
IGBT
Rth(j-c)
0.015
Thermal Impedance
FWD
Rth(j-c)
°C/W
-
0.035
Junction to case
Notes; *4 : RG value is the test condition’s value for decision of the switching times, not recommended value, please determine
the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.
Remark; For actual application,please confirm this spec.sheet is the newest revision.
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