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参数资料
| 型号： | MBN400C33A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 400 A, 3300 V, N-CHANNEL IGBT |
| 文件页数： | 2/4页 |
| 文件大小： | 56K |
| 代理商： | MBN400C33A |
1000
04
26
8
10
500
1000
500
1000
500
0
TYPICAL
Collector
Current,
Ic
(A)
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Switching
Time
,td(on),
tr
,td(off),
tf
,trr
(
s)
F
orw
ard
Current,
I
C
(A)
Collector Current, IC(A)
Switching time vs. Collector current
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
Cies
,Coes
,Cres(nF)
Collector to Emitter Voltage, VCE (V)
Capacitance vs. Collector to Emitter Voltage
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
PDE-N400C33A-0
14V13V
tr
tf
td(off)
full
10%
trr
12V
11V
10V
9V
8V
7V
Tc
=25°C
15V
04
26
8
10
0
TYPICAL
7V
8V
9V
10V
11V
12V
13V
14V
15V
Tc
=125°C
4
3
2
1
0
200
100
300
400
500
0
TYPICAL
T
u
rn-on
Loss
Eon
(J/pulse)
Collector Current IC (A)
Turn-on Loss vs. Collector Current
1
0.6
0.8
0.4
0.2
0
200
100
300
400
500
0
TYPICAL
01
3
4
25
0
TYPICAL
VGE
=0
Tc
=25°C
Tc
=125°C
1000
1
10
100
10
1
0.1
TYPICAL
Cies
Coes
Cres
Tc
=25°C
[Conditions]
VCC
=1650V,Tc=125°C
VGE
=±15V,RG=10
Lp
≈150nH
Inductive Load
[Conditions]
VCC
=1650V,Tc=125°C
VGE
=±15V,RG=10
Lp
≈150nH
Inductive Load
td(on)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBN400GR12 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Rated 400A/1200V, Single-pack type |
| MBN400GR12AW | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-channel IGBT |
| MBN400GR12BW | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-channel IGBT |
| MBN400GS12AW | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-channel IGBT |
| MBN40348401 | 制造商:LG Corporation 功能描述:Case |
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