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参数资料
| 型号： | MBN600C20 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600 A, 2000 V, N-CHANNEL IGBT |
| 文件页数： | 2/4页 |
| 文件大小： | 62K |
| 代理商： | MBN600C20 |
1600
01
3
4
2
567
9
810
600
400
200
800
1000
1200
1400
1600
600
400
200
800
1000
1200
1400
1600
600
400
200
800
1000
1200
1400
0
TYPICAL
Collector
Current,
Ic
(A)
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Switching
Time
,td(on),
tr
,td(off),
tf
,trr
(
s)
F
orw
ard
Current,
I
F
(A)
Collector Current, IC(A)
Switching time vs. Collector current
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
Cies
,Coes
,Cres(nF)
Collector to Emitter Voltage, VCE (V)
Capacitance vs. Collector to Emitter Voltage
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
PDE-N600C20-0
14V
13V
tr
tf
td(off)
full
10%
trr
12V
11V
10V
9V
8V
7V
Tc
=25°C
VGE
=15V
01
34
25
6
7
9
810
0
TYPICAL
7V
8V
9V
10V
11V
12V
13V
14V
VGE
=15V
Tc
=125°C
5
4
3
2
1
0
200
100
300
400
500
600
700
0
TYPICAL
T
u
rn-on
Loss
Eon
(J/pulse)
Collector Current IC (A)
Turn-on Loss vs. Collector Current
0.7
0.5
0.6
0.4
0.3
0.2
0.1
0
200
100
300
400
700
500
600
0
TYPICAL
01
3
4
25
0
TYPICAL
VGE
=0
Tc
=25°C
Tc
=125°C
1000
100
1
10
100
10
1
0.1
TYPICAL
Cies
Coes
Cres
[Conditions]
VGE
=0
f
=100KHz
Tc
=25°C
[Conditions]
Tc
=125°C
VCC
=1000V
Lp
≈150nH
RG(on)
=8.2
RG(off)
=8.2
VGE
=±15V
Inductive Load
[Conditions]
Tc
=125°C
VCC
=1000V
Lp
≈150nH
RG(on)
=8.2
RG(off)
=8.2
VGE
=±15V
Inductive Load
td(on)
t1
t3
t4
0
10%
VGE
IC
IC VCE dt
Eon(10%)
=
Eon(full)
=
VCE
0
t2
.
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