参数资料
型号: MBN600C33A
元件分类: IGBT 晶体管
英文描述: 600 A, 3300 V, N-CHANNEL IGBT
文件页数: 2/4页
文件大小: 59K
代理商: MBN600C33A
1000
04
26
8
10
500
1000
500
1000
500
0
TYPICAL
Collector
Current,
Ic
(A)
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Switching
Time
,td(on),
tr
,td(off),
tf
,trr
(
s)
F
orw
ard
Current,
I
C
(A)
Collector Current, IC(A)
Switching time vs. Collector current
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
Cies
,Coes
,Cres(nF)
Collector to Emitter Voltage, VCE (V)
Capacitance vs. Collector to Emitter Voltage
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
PDE-N600C33A-0
14V13V
tr
tf
td(off)
trr
12V
11V
10V
9V
8V
VGE
=7V
Tc
=25°C
15V
04
26
8
10
0
TYPICAL
VGE
=7V
8V
9V
10V
11V
12V
13V
14V
15V
Tc
=125°C
4
3
2
1
0
200
400
600
0
TYPICAL
01
3
4
25
0
TYPICAL
VGE
=0
Tc
=25°C
Tc
=125°C
1000
1
10
100
10
1
0.1
TYPICAL
Cies
Coes
Cres
Tc
=25°C
[Conditions]
VCC
=1650V,Tc=125°C
VGE
=±15V,RG=6.8
Lp
≈150nH
Inductive Load
td(on)
full
10%
T
u
rn-on
Loss
Eon
(J/pulse)
Collector Current IC (A)
Turn-on Loss vs. Collector Current
1.5
1
0.5
0
200
400
600
0
TYPICAL
[Conditions]
VCC
=1650V,Tc=125°C,Lp≈150nH
VGE
=±15V,RG=6.8
Inductive Load
t1
t3
t4
0
10%
VGE
IC
IC VCE dt
Eon(10%)
=
Eon(full)
=
VCE
0
t2
.
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