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参数资料
| 型号： | MBN600GR12A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600 A, 1200 V, N-CHANNEL IGBT |
| 文件页数： | 2/4页 |
| 文件大小： | 125K |
| 代理商： | MBN600GR12A |
VGE
=15V 14V13V12V
1200
1000
800
400
200
02
4
6
8
10
600
0
1200
1000
800
400
200
600
0
11V
TYPICAL
10V
9V
Collector
Current,
Ic
(A)
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
20
15
10
5
0
2400
1200
3600
4800
6000
TYPICAL
Vcc
=600V
Ic
=600A
Tc
=25°C
Gate
to
Emitter
V
oltage
,
V
GE
(V)
F
orw
ard
Current,
I
F
(A)
Gate Charge, QG (nC)
Gate charge characteristics
600
1200
1000
800
200
400
0
1
234
5
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
PDE-N600GR12A-0
Ic
=600A
Ic
=1200A
Pc
=3790W
VGE
=0V
Tc
=25°C
Tc
=125°C
Tc
=25°C
VGE
=15V 14V13V12V
02
4
6
8
10
0
11V
TYPICAL
10V
9V
Tc
=125°C
Tc
=125°C
Ic
=600A
Ic
=1200A
Tc
=25°C
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