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参数资料
| 型号： | MBPW16-06S6 |
| 厂商： | IXYS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 32 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-25 |
| 文件页数： | 3/6页 |
| 文件大小： | 571K |
| 代理商： | MBPW16-06S6 |
2003 IXYS All rights reserved
PFC Boost Converter Diode D7
Symbol
Conditions
Maximum Ratings
V
RRM
T
VJ = 25°C to 150°C
600
V
I
FAVM
rect.,d=0.5;T
C =125°C
30
A
I
FRMS
T
C = 125°C
70
A
Symbol
Conditions
Characteristic Values
min.
typ. max.
V
F
I
F =30 A;
T
VJ = 150°C
1.56
V
T
VJ =
25°C
2.51
V
I
R
V
R = VRRM; TVJ =
25°C
250 uA
T
VJ = 125°C
2.0 mA
I
RM
I
F = 50 A;- diF/dt = 100 A/s; TVJ = 100°C
4
A
t
rr
V
R = 30 V; TVJ = 25 °C;IF = 1 A;-diF/dt = 200 A/s
35 ns
R
thJC
1.1 K/W
R
thJS
1.7 K/W
MBPW16-06S6
PFC Boost Converter IGBT: T7
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C to 150°C
600
V
V
GES
Continuous
± 20
V
V
GEM
Transient
± 30
V
I
C25
T
C = 25°C
60
A
I
C90
T
C = 90°C
30
A
SSOA
V
GE = ±15 V; RG = 33 ; TVJ = 125°C
I
CM =
60
A
(RBSOA)
Clamped inductive load @0.8V
CES
P
tot
T
C = 25°C
140
W
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ. max.
V
CE(sat)
I
C = IC90; VGE = 15 V; TVJ =
25°C
1.9
V
I
C = IC90; VGE = 15 V; TVJ = 150°C
2.0
V
V
GE(th)
I
C = 250 A; VGE = VCE
3.0
5.0
V
I
CES
V
CE = 0.8VCES; VGE = 0 V; TVJ =
25°C
50
A
T
VJ = 125°C
1.0 mA
I
GES
V
CE = 0 V; VGE = ± 20 V
100
nA
t
d(on)
25
ns
t
r
35
ns
t
d(off)
210
ns
t
f
80
ns
E
on
0.3
mJ
E
off
0.6
mJ
C
ies
V
CE = 25 V; VGE = 0 V; f = 1 MH z
2500
pF
Q
Gon
V
CE= 300 V; VGE = 15 V; IC = 20 A
110
nC
R
thJC
0.8 K/W
R
thJS
1.1 K/W
Inductive load, T
VJ = 150°C
V
CE = 0.8VCES; IC = IC90
V
GE = 15 V; RG = Roff = 22
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