参数资料
型号: MBR0530-E3
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 0.5 A, 30 V, SILICON, SIGNAL DIODE
封装: ROHS COMPLIANT, PLASTIC PACKAGE-2
文件页数: 2/3页
文件大小: 75K
代理商: MBR0530-E3
www.vishay.com
2
Document Number 85676
Rev. 1.2, 22-Apr-04
VISHAY
MBR0530
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
1) Pulse test: 300 ms pulse width, 1 % duty cycle
Package Dimensions in mm (Inches)
Parameter
Test condition
Symbol
Value
Unit
Typical thermal resistance
junction to lead
RthJL
118
°C/W
Typical thermal resistance
junction to ambient
RthJA
206
°C/W
Operating junction and storage
temperature
Tj, Tstg
- 55 to + 125
°C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Maximum instantaneous
forward voltage1)
IF = 0.1 A, Tj = 25 °C
VF
0.375
V
IF = 0.1 A, Tj = 100 °C
VF
0.340
V
IF = 0.5 A, Tj = 25 °C
VF
0.43
V
IF = 0.5 A, Tj = 100 °C
VF
0.420
V
Maximum DC reverse current
VR = 30 V, T<tief<j = 25 °C
IR
130
A
VR = 30 V, T<tief<j = 100 °C
IR
5mA
VR = 15 V, T<tief<j = 25 °C
IR
20
A
Cathode Band
17432
0.55 (0.022)
1.70 (0.067)
1.40 (0.055)
3.85
(0.152)
3.55
(0.140)
2.85
(0.112)
2.55
(0.100)
0.1
(0.004)
max.
1.35
(0.053)
max.
0.25 (0.010) min.
0.15
(0.006)
max.
ISO Method A
1.40 (0.055)
2.40 (0.094)
1.40
(0.055)
Mounting Pad Layout
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