参数资料
型号: MBR0540PBF
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.5 A, 40 V, SILICON, SIGNAL DIODE
文件页数: 2/5页
文件大小: 104K
代理商: MBR0540PBF
MBR0540
2
Preliminary Data Sheet PD-20203 12/01
www.irf.com
(*) dPtot
1
dTj
Rth(j-a)
Part number
Value
V
R
Max. DC Reverse Voltage (V)
V
RWM Max. Working Peak Reverse Voltage (V)
40
Voltage Ratings
I
F
ForwardCurrent
0.5
A
DC,T
L=122°C
I
FSM
Max.PeakOneCycleNon-Repetitive
50
A
5s Sineor3sRect.pulse
SurgeCurrent,@T
J=25°C
6.0
A
10msSineor6msRect. pulse
Parameters
Value Units
Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated V
RRM applied
T
J
Max.Junction Temperature Range(*) -65 to150
°C
T
stg
Max.Storage Temperature Range
-65 to150
°C
R
thJL Max.Thermal Resistance Junction
150
°C/W Mounted on PC board FR4 with minimum pad size
to Lead
R
th(j-a) Max.ThermalResistanceJunction
200
°C/W 1inchsquarepadsize(1x0.5inchforeachlead)on
toAmbient
FR4 board
Wt
ApproximateWeight
0.012
g
Case Style
SOD123
DeviceMarking
IR540
Thermal-Mechanical Specifications
Parameters
Value
Units
Conditions
V
FM
Max. Forward Voltage Drop
(1)
0.480
V
@ 0.5A
T
J = 25°C
0.560
V
@ 1A
V
FM
Max. Forward Voltage Drop
(1)
0.420
V
@ 0.5A
T
J = 100°C
0.520
V
@ 1A
I
RM
Max. Reverse Leakage
(1)
10
A
V
R = 20V
TJ = 25°C
Current
5
mA
V
R = 20V
TJ = 100°C
20
A
V
R = 40V
TJ = 25°C
13
mA
V
R = 40V
TJ = 100°C
C
T
Max. Junction Capacitance
60
pF
V
R = 5VDC (test signal range 100KHz to 1Mhz), TJ = 25°C
dv/dt Max. Voltage Rate of Change
10000
V/s
(Rated VR)
Electrical Specifications
Parameters
Value
Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
<
thermal runaway condition for a diode on its own heatsink
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