参数资料
型号: MBR10100-E3/4W
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 135K
描述: DIODE SCHOTT 10A 100V SGL TO220
标准包装: 1,000
系列: TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 10A
电压 - 在 If 时为正向 (Vf)(最大): 800mV @ 10A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 100µA @ 100V
安装类型: 通孔
封装/外壳: TO-220-2
供应商设备封装: TO-220AC
包装: 管件
其它名称: MBR10100-E3/4W-ND
MBR10100-E3/4WGI
New PI'0dUCt
MBR(F,B)1o9o & MBR(F,B)1o1oo ‘M
Vishay General Semiconductor 7
ELEOTRIOAL cHARAcTERIsTIcs (TC = 25 00 unless otherwise noted)
PARAMETER TEsTco~RIEIoNs 1
0.80
Maximum instantaneous forward voltage (‘) 0.65
0.75
Maximum reverse current at working peak
reverse voltage (2)
Notes
(‘) Pulse test: 300 us pulse width, 1 °/s duty cycle
(2) Pulse test: Pulse width 5 40 ms
THERMAL cHARAcTERIsTIcs (To = 25 ac unless otherwise noted)
PARAMETER @ -E1
. . Fl
Typical thermal resistance QJA
RBJC
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (9) PACKAGE CODE BASE QUANTITY DELIVERY MODE
ToE22oAc MERARARAER/Aw jjmmimj
IToE22oAc MEREARARAER/Aw eZ
To?263AB MBRB1o1oo-E3/4WTo—263AB MBRB1o1oo-E3/8W 800/reel Tape and reel
RATINGs AND cHARAcTERIsTIcs cuRVEs
(TA = 25 cc unless otherwise noted)
loo
Resistive or inductive LoadT J : T J max8 3 ms Single Hall Slne—Wave
b:3
A 3
< :
E § 29:) 3 1202 0
0 a’
'9 E‘in 3 loog (0E ‘E; T-g E 80 XE E 2g) x< 8 onD.
40 2
O 50 Too 150 I In loo
Case Temperature (“Cl Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve Figure 2. Maximum Non—Repetitive Peak Forward Surge Current
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89034
2 PDD-Americas@vishay_oom, PDD-Asia@vishay_oom, PDD-EuroQe@vishay_oom Revision: 24-Jun-09
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