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参数资料
| 型号： | MBR10100CE |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC, I2PAK-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 119K |
| 代理商： | MBR10100CE |
RATING AND CHARACTERISTIC CURVES
MBR10100CE
FIG.1- FORWARD CURRENT DERATING CURVE
0
2
4
6
8
10
12
0
25
50
75
100
125
150
CASE TEMPERATURE, ( C)
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
E
N
T
,
(A
)
FIG.2- MAXIMUM NON-REPETITIVE SURGE CURRENT
0
20
40
60
80
100
120
1
10
100
NUMBER O F CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,
(A
)
FIG.3- TYPICAL JUNCTION CAPACITANCE
10
100
1000
1
10
100
REVERSE,VOLTAGE
C
a
p
a
c
it
a
n
c
e
,(
p
F
)
FIG.4 - TYP ICAL FORWARD CHARACTERISTICS
0.01
0.1
1
10
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
INSTANTANEOUS FORWARD VOLTAGE, (V)
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,
(A
)
FIG.3- TYPICAL REVERS E CHARACTERISTICS
0.0001
0.001
0.01
0.1
1
10
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VO LTAGE, (V)
IN
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
C
U
R
E
N
T
,
(m
A
)
O
PULSE WIDTH 300us,
2% Duty Cycle
8.3ms Single Half Sine-Wave
RESISTIVE OR INDUCTIVE LOAD
Tj=25°C
Tj=125°C
Tj=25°C
相关PDF资料 |
PDF描述 |
|---|---|
| MBR10100CT | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10150CT-1 | 10 A, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR10150CT | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR120P | 1 A, 20 V, SILICON, SIGNAL DIODE |
| MBR115P | 1 A, 15 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR10100CG | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:Power Schottky Rectifier - 10Amp 100Volt |
| MBR10100CG-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SCHOTTKY BARRIER RECTIFIER |
| MBR10100CG-TF3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SCHOTTKY BARRIER RECTIFIER |
| MBR10100CG-TQ2-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SCHOTTKY BARRIER RECTIFIER |
| MBR10100CG-TQ2-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SCHOTTKY BARRIER RECTIFIER |
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