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| 型号： | MBR10100CT-E3/4W |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 123K |
| 代理商： | MBR10100CT-E3/4W |
MBR1090CT, MBR10100CT
Vishay General Semiconductor
Document Number: 89125
Revision: 26-Apr-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
Dual Common-Cathode High Voltage Schottky Rectifier
FEATURES
Trench MOS Schottky technology
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
freewheeling
diodes,
dc-to-dc
converters or polarity protection application
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
90 V, 100 V
IFSM
120 A
VF
0.75 V
TJ max.
150 °C
TO-220AB
CASE
PIN 2
PIN 1
PIN 3
1
2
3
TMBS
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR1090CT
MBR10100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 105 °C
total device
per diode
IF(AV)
10
5.0
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
120
A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
EAS
60
mJ
Peak repetitive reverse current at tp = 2 s, 1 kHz,
TJ = 38 °C ± 2 °C per diode
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR10100CTF-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR10100CTF-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR10100CT-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR10100CT-HE3/45 | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 100V 10A 3-Pin(3+Tab) TO-220AB Tube |
| MBR10100CT-LJ | 制造商:Diodes Incorporated 功能描述:DIODE SCHOTTKY 100V 5A TO220AB |
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