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参数资料
| 型号： | MBR10125CT |
| 厂商： | LITE-ON ELECTRONICS INC |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 125 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 69K |
| 代理商： | MBR10125CT |
MBR10125CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
2.79
N
M
L
K
J
I
1.14
2.29
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1
3
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 125 Volts
FORWARD CURRENT - 10 Amperes
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
VRMS
VDC
VRRM
I(AV)
IFSM
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
10
120
TJ
Operating Temperature Range
-65 to +175
TSTG
Storage Temperature Range
-65 to +175
Typical Thermal Resistance (Note 2)
R0JC
3.0
C/W
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
VF
V
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =125 C
@TJ =25 C
8
2
uA
mA
TC =105 C
Maximum Forward
Voltage (Note 1)
IF=5A @
IF=10A @
TJ =125 C
TJ =25 C
TJ =125 C
TJ =25 C
MBR10125CT
125
87.5
125
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/us
0.92
0.75
1.00
0.85
Typical Junction Capacitance
per element (Note 3)
CJ
300
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
pF
REV. 1, Aug-2007, KTHC40
℃
相关PDF资料 |
PDF描述 |
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| MBR10125CT | 10 A, 125 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10150CT-E1 | 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR1035 | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR1035-E3 | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR1035 | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
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