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参数资料
| 型号： | MBR10150 |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 2/2页 |
| 文件大小： | 80K |
| 代理商： | MBR10150 |
PAGE . 2
STAD-APR.30.2009
MBR1040~MBR10200
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
PEAK
FOR
W
ARD
SURGE
CURRENT
,
NO. OF CYCLE AT 60Hz
200
175
150
125
100
75
50
25
0
1
2
5
10
20
50
100
8.3ms Single Half Since-Wave
JEDEC Method
Fig.2- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
0.1
1.0
100
10
0.4
0.6
0.8
1.0
T=25 C
A
O
80-100V
150-200V
FOR
W
A
RD
CURRENT
,
AMPERES
FORWARD VOLTAGE, VOLTS
50-60V
1.2
40-45V
Fig.3- TYPICAL REVERSE CHARACTERISTICS
INST
ANT
ANEOUS
REVERSE
CURRENT
,m
A
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
120
140
10
1.0
0.1
.01
.001
0
20406080
100
T =100 C
J
O
T=
J
75 C
O
T=
J
25 C
O
RATING A ND CHARACTERISTIC CURVES
Fig.1- FORWARD CURRENT DERATING CURVE
CASE TEMPERATURE, C
O
20.0
16.0
8.0
0
4.0
12.0
0
20
40
60
80
100
120
140
160
180
A
VERAGE
FOR
W
A
RD
RECTIFIED
CURRENT
AMPERES
=40V
= 45-200V
RESISTIVE OR
INDUCTIVE LOAD
相关PDF资料 |
PDF描述 |
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| MS14A | 1 A, 45 V, SILICON, SIGNAL DIODE, DO-214AC |
| MMBD914T/R13 | 0.2 A, 100 V, SILICON, SIGNAL DIODE |
| MMBD717AWT/R13 | 0.2 A, 20 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR10150C | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR10150CG-TF3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR10150CL-TF3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR10150CT | 功能描述:肖特基二极管与整流器 10 Amp 150 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR10150CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 150V 10A 3-Pin(3+Tab) TO-220AB Tube |
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