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参数资料
| 型号： | MBR10150CT |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 161K |
| 代理商： | MBR10150CT |
Number: DB-027
March 2010 Release, Revision F
Page 1
TAK CHEONG
SEMICONDUCTOR
10A SCHOTTKY BARRIER DIODE
Dual High Voltage Schottky Rectifier
Specification Features:
High Voltage Wide Range Selection, 100V, 150V & 200V
High Switching Speed Device
Low Forward Voltage Drop
Low Power Loss and High Efficiency
Guard Ring for Over-voltage Protection
High Surge Capability
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
DEVICE MARKING DIAGRAM
POLARITY CONFIGURATION
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol
Parameter
MBR10100CT
MBR10150CT
MBR10200CT
Units
VRRM
VRWM
VR
Maximum Repetitive Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Reverse Voltage
100
150
200
V
IF(AV)
Average Rectified Forward Current
Per Leg
Per Package
5
10
A
IFSM
Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load
80
A
TSTG
Storage Temperature Range
-65 to +150
°C
TJ
Operating Junction Temperature
+150
°C
These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTIC
Symbol
Parameter
Value
Units
RθJC
Maximum Thermal Resistance, Junction-to-Case (per leg)
1.5
°C/W
RθJA
Maximum Thermal Resistance, Junction-to-Ambient (per leg)
62.5
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
TA = 25°C unless otherwise noted
MBR10100CT
MBR10150CT
MBR10200CT
Symbol
Parameter
Test Condition
(Note 1)
Min
Max
Min
Max
Min
Max
Units
IR
Reverse Current
@ rated VR
---
100
---
100
---
100
μA
VF
Forward Voltage
IF = 5A
IF = 10A
---
0.85
0.95
---
0.92
1.00
---
1.00
1.25
V
Note/s:
1. Tested under pulse condition of 300
μS.
MBR10100CT
through
MBR10200CT
1
2
3
TO-220AB
1. Anode
2. Cathode
3. Anode
L xxyy
Line 2
Line 3
Line 4
L = Tak Cheong Logo
xxyy = Monthly Date Code
Line 2 = MBR
Line 3 = 10xxxCT
Line 4 = Polarity
相关PDF资料 |
PDF描述 |
|---|---|
| MBR10200CT | 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10100CT | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10200F | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR1060F | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR1080F | 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR10150CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 150V 10A 3-Pin(3+Tab) TO-220AB Tube |
| MBR10150CT_08 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:10 Amp High Voltage Power Schottky Barrier Rectifier 150Volts |
| MBR10150CT-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR10150CTF-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR10150CTF-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
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