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参数资料
| 型号： | MBR10150CTL |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 121K |
| 代理商： | MBR10150CTL |
RATING AND CHARACTERISTIC CURVES
MBR10150CTL
FIG.1- FORWARD CURRENT DERATING CURVE
0
1
2
3
4
5
6
0
25
50
75
100
125
150
CASE TEMPERATURE, ( C)
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
E
N
T
,
(A
)
FIG.2- MAXIMUM NON-REPETITIVE SURGE CURRENT
0
20
40
60
80
100
120
1
10
100
NUMBER O F CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,
(A
)
FIG.3- TYPICAL JUNCTION CAPACITANCE
1
10
100
1000
1
10
100
REVERSE,VOLTAGE
C
a
p
a
c
it
a
n
c
e
,(
p
F
)
FIG.4- TYPICAL FORWARD CHARACTERISTICS
1
10
100
0.5
0.6
0.7
0.8
0.9
1
1.1
INSTANTANEOUS FORWARD VOLTAG E, (V)
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,
(A
)
FIG.5- TYPICAL REVE RSE CHARACTERISTICS
0.00001
0.0001
0.001
0.01
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK RE VERSE VOLTAGE, (V)
IN
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
C
U
R
E
N
T
,
(m
A
)
Note: LSC and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections
or other changes, to this document, and the products and services described herein at anytime, without notice.
O
Tj=25°C
Tj=25°C,
PULSE WIDTH 300us,
2% Duty Cycle
8.3ms Single Half Sine-Wave
RESISTIVE OR INDUCTIVE LOAD
Tj=100°C
相关PDF资料 |
PDF描述 |
|---|---|
| MBR12045 | 120 A, 45 V, SILICON, RECTIFIER DIODE |
| MBR150 | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 |
| MBR1560CT | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20080 | 180 A, 80 V, SILICON, RECTIFIER DIODE |
| HS18390 | 180 A, 90 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR10150CT-LJ | 制造商:Diodes Incorporated 功能描述:SCHOTTKY RECTIFIER TO220AB TUBE 50PCS - Rail/Tube 制造商:Diodes Incorporated 功能描述:DIODE SCHOTTKY TO-220AB |
| MBR10150CTP | 功能描述:肖特基二极管与整流器 10A 150 ANON RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR10150DC | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
| MBR10150DC_R2_10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR10150F | 制造商:ASEMI 制造商全称:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers |
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