参数资料
型号: MBR10200CT
元件分类: 整流器
英文描述: 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: PLASTIC PACKAGE-3
文件页数: 1/3页
文件大小: 221K
代理商: MBR10200CT
Voltage
45 to 200 V
Current
10 A
May - 07
High current capability
The plastic material
U/L recognition 94 V-0
Terminals: Leads solderable per
MIL-STD202
Low forward Voltage drop
MBR10CT
(both diodes conducting)
65 to + 175 °C
10 A
120 A
31
45
65 to + 150 °C
MBR1045CT
45
42
60
140
200
1.5 °C/W
0.57 V
0.80 V
0.65 V
MBR1045CT
0.70 V
MBR1060CT
MBR10200CT
1.0 A
MBR10100CT
0.85 V
0.75 V
TO-220AB
10 Amp. Schottky Barrier Rectifier
Absolute Maximum Ratings, according to IEC publication No. 134
Electrical Characteristics
70
100
MBR10100CT
MBR10200CT
0.88 V
0.78 V
0.10 mA
0.5 A
Common Cathode
Suffix "C"
1
3
2
VF
Max. forward voltage drop
at IF = 5 A
IR
Max. Instantaneous reverse
Rthj-c
Typical Thermal Resistance
Tj = 25 °C
IRRM
Peak repetitive reverse surge current
Tj = 125 °C
Tj = 25 °C
Peak recurrent reverse voltage (V)
Maximum RMS voltage (V)
Maximum DC blocking voltage (V)
Maximum average Forward current
VRRM
VRMS
VDC
IF (AV)
Tj
Tstg
Operating temperature range
Storage temperature range
IFSM
8.3 ms. peak forward surge current
(Jedec Method)
at TC = 125 °C
current at VR = VRRMax
Metal silicon junction, majority carrier
conduction
相关PDF资料
PDF描述
MA5KP11E3TR 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR
MA5KP28AE3TR 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR
MA5KP45CAE3TR 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR
MA5KP85E3TR 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR
MX5KP10CAE3TR 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR
相关代理商/技术参数
参数描述
MBR10200CT C0 制造商:SKMI/Taiwan 功能描述:Diode Schottky 200V 10A 3-Pin(3+Tab) TO-220AB Tube
MBR10200CT_B0_10001 制造商:PanJit Touch Screens 功能描述:
MBR10200CT_T0_10001 制造商:PanJit Touch Screens 功能描述:
MBR10200CTC0 制造商:Taiwan Semiconductor 功能描述:Schottky diode 200V, 10A, TO-220AB
MBR10200CT-G1 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER