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参数资料
| 型号： | MBR10200CT |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 32K |
| 代理商： | MBR10200CT |
2008. 1. 3
1/2
SEMICONDUCTOR
TECHNICAL DATA
MBR10200CT
SCHOTTKY BARRIER TYPE DIODE
Revision No : 0
SWITCHING TYPE POWER SUPPLY APPLICATION.
CONVERTER & CHOPPER APPLICATION.
FEATURES
Average Output Rectified Current
: IO=10A.
Repetitive Peak Reverse Voltage
: VRRM=200V.
Fast Reverse Recovery Time : trr=35ns.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
TO-220AB
1.46
A
B
C
D
E
F
G
H
J
K
M
N
O
0.8
0.1
+
_
2.8
0.1
+
_
2.54
0.2
+
_
1.27
0.1
+
_
1.4
0.1
+
_
13.08
0.3
+
_
3.6
0.2
+
_
+
_
9.9
0.2
+
_
9.2
0.2
+
_
4.5
0.2
+
_
2.4
0.2
15.95 MAX
1.3+0.1/-0.05
0.5+0.1/-0.05
3.7
1.5
A
F
B
J
G
K
M
L
E
I
O
C
H
NN
Q
D
Q
P
1. ANODE
2. CATHODE
3. ANODE
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
200
V
Average Output Rectified
Current (Tc=118
) (Note)
IO
10
A
Peak One Cycle Surge Forward
Current (Non-Repetitive 60Hz)
IFSM
100
A
Junction Temperature
Tj
-40
150
Storage Temperature Range
Tstg
-55
150
Note : average forward current of centertap full wave connection.
3
1
2
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
(Note)
VFM
IFM=5A
-
0.95
V
Repetitive Peak
Reverse Current
(Note)
IRRM
VRRM=Rated
-
150
Reverse Recovery Time
(Note)
trr
IF=1.0A, di/dt=-30A/
-
35
ns
Thermal Resistance
(Note)
Rth(j-c)
Juction to Case
-
2.2
/W
Note : A value of one cell
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| MBR1060CG-TF3-T | 5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR10200CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 200V 10A 3-Pin(3+Tab) TO-220AB Tube |
| MBR10200CT_B0_10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR10200CT_T0_10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR10200CTC0 | 制造商:Taiwan Semiconductor 功能描述:Schottky diode 200V, 10A, TO-220AB |
| MBR10200CT-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
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