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| 型号： | MBR1030CT |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 231K |
| 描述： | DIODE SCHOTTKY 10A 30V TO220-3 |
| 标准包装： | 50 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 840mV @ 10A |
| 电流 - 在 Vr 时反向漏电： | 100µA @ 30V |
| 电流 - 平均整流 (Io)（每个二极管）： | 10A |
| 电压 - (Vr)（最大）： | 30V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
MBR1030CT-MBR1060CT-I
Document number: DS30027 Rev. 7 - 2
2 of 4
www.diodes.com
October 2013
? Diodes Incorporated
MBR1030CT- MBR1060CT-I
Maximum Ratings (Per Leg) (@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol MBR
MBR
1030CT
1040CT
MBR
1045CT
MBR
1050CT
MBR
1060CT-I
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30 40 45 50
60 V
RMS Reverse Voltage
VR(RMS)
21 28 31.5 35
42 V
Average Rectified Output Current (Note 5) (Per Leg)
(Total)
IO
5
10
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load
IFSM
100 A
Thermal Characteristics (Per Leg)
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Case (Note 5)
RθJC
3 K/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150 °C
Electrical Characteristics
(Per Leg) (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol MBR
MBR
1030CT
1040CT
MBR
1045CT
MBR
1050CT
MBR
1060CT-I
Unit
Forward Voltage Drop Maximum
@ I
F
= 5.0A, T
C
= +125°C
@ I
F
= 5.0A, T
C
= +25°C
VFM
0.55
0.65
0.65
0.75
V
Peak Reverse Current Maximum @ TC
= +25°C
at Rated DC Blocking Voltage (Note 6) @ TC
= +125°C
IRM
0.1
15
mA
Typical Total Capacitance (Note 7)
CT
150 pF
Notes: 5. Device mounted on Device with additional heat sink (45mm X 20mm X 12mm), with minimum recommended pad layout per http://www.diodes.com
6. Short duration pulse test used to minimize self-heating effect.
7. Measured at 1.0 MHz and applied re
verse voltage of 4.0V DC and per element.
0
2
4
6
8
10
050100150
I, AVE
R
A
G
E
F
O
R
ZWA
R
D
C
U
R
R
EN
T
(A)
(AV)
T , CASE TEMPERATURE ( C)C
°
Figure 1 Forward Current Derating Curve
Total Device
Per Element
I , INS
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
Figure 2 Typical Forward Characteristics, per Element
T = -55°CJ
MBR1030CT - MBR1045CT
100
0.2 0.4 0.6 0.8
10
0.1
0.01
1
T = 125°CJ
T = 100°CJ
T = 75°CJ
T = 150°CJ
T = 25°CJ
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