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参数资料
| 型号： | MBR1045FCT |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 103K |
| 代理商： | MBR1045FCT |
PAGE . 1
April 21,2011-REV.05
MBR1040FCT SERIES
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency.
High current capability
Guardring for overvlotage protection
For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
In compliance with EU RoHS 2002/95/EC directives
10 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
CURRENT
40 to 200 Volts
10 Amperes
MECHANICAL DATA
Case: ITO-220AB molded plastic
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.055 ounces, 1.5615 grams.
Notes :
Both Bonding and Chip structure are available.
PA RA ME TE R
S YMB OL MBR1040FCT MBR1045FCT MBR1050FCT MBR1060FCT MBR1080FCT MBR1090FCT MBR10100FCT MBR10150FCT MBR10200FCT UNITS
Ma xi mum Re c urre nt P e a k Re ve rse Vo lta g e
V
RRM
40
45
50
60
8 0
9 0
10 0
1 5 0
20 0
V
Ma xi mum RMS Vo lta g e
V
RMS
28
3 1 .5
35
42
5 6
6 3
7 0
10 5
1 40
V
Ma xi mum D C B lo c ki ng Vo lta g e
V DC
40
45
50
60
8 0
9 0
10 0
1 5 0
20 0
V
Ma xi mum A ve rage F o rward C urre nt
(S e e fi g.1)
IF(AV)
10
A
Pe ak F o rward S urg e C urre nt : 8.3 ms s i ng le
ha lf si ne -wave superi mp o se d on ra te d lo ad
(J ED EC me tho d )
IFSM
15 0
A
Ma xi mum F o rwa rd Vo lta ge at 5A , p e r le g
V F
0 .7
0 .7 5
0 .8
0.9
V
Ma xi mum DC Re ve rs e Curre nt T
J =2 5
OC
at Ra ted D C B loc ki ng Vo lta ge T
J =1 2 5
OC
IR
0.05
20
mA
Typ i ca l The rma l Re s i sta nc e
RΘJC
2
OC / W
Op era ti ng and S to rage J uncti on
Te mp erature Ra ng e
TJ,TSTG
-55 to + 150
-6 5 to + 1 7 5
OC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
0.
1
2
(2.
85
)
0
.100
(2
.5
5)
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.
27
2(
6
.9
)
0.
24
8(
6
.3
)
0.60
6(
1
5
.4
)
0.58
3(
1
4
.8
)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
0.098(2.5)
0.027(0.67)
0.022(0.57)
0.
17
7(
4
.5)
0.
13
7(
3
.5)
0.54
3(
13
.8
)
0.51
2(
13
.0
)
相关PDF资料 |
PDF描述 |
|---|---|
| MBR1045CT | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR1060CT | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR1080 | 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR10100 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR1090CT | 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR1045G | 功能描述:肖特基二极管与整流器 10A 45V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR1045H | 制造商:ASEMI 制造商全称:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBR1045-HE3 | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 45V 10A 2-Pin(2+Tab) TO-220AC |
| MBR1045HE3/45 | 功能描述:肖特基二极管与整流器 45 Volt 10A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR1045HF | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
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