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参数资料
| 型号： | MBR1050HE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 2/5页 |
| 文件大小： | 129K |
| 代理商： | MBR1050HE3/45 |
MBR(F,B)1035 thru MBR(F,B)1060
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88669
Revision: 07-May-08
2
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR1035
MBR1045
MBR1050
MBR1060
UNIT
Maximum instantaneous
forward voltage (1)
IF = 10 A
IF = 20 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VF
-
0.57
0.84
0.72
0.80
0.70
0.95
0.85
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (1)
TJ = 25 °C
TJ = 125 °C
IR
0.10
15
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Maximum thermal resistance from junction to case
RθJC
2.0
4.0
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AC
MBR1045-E3/45
1.80
45
50/tube
Tube
ITO-220AC
MBRF1045-E3/45
1.94
45
50/tube
Tube
TO-263AB
MBRB1045-E3/45
1.33
45
50/tube
Tube
TO-263AB
MBRB1045-E3/81
1.33
81
800/reel
Tape and reel
TO-220AC
MBR1045HE3/45 (1)
1.80
45
50/tube
Tube
ITO-220AC
MBRF1045HE3/45 (1)
1.94
45
50/tube
Tube
TO-263AB
MBRB1045HE3/45 (1)
1.33
45
50/tube
Tube
TO-263AB
MBRB1045HE3/81 (1)
1.33
81
800/reel
Tape and reel
Figure 1. Forward Current Derating Curve
2
4
6
8
10
12
0
MBR1035 - MBR1045
MBR1050 - MBR1060
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
0
50
100
150
Case Temperature (°C)
Resistive or Inductive Load
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0.1
1
10
100
25
50
75
125
150
175
100
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相关PDF资料 |
PDF描述 |
|---|---|
| MBRF25H45CTHE3/45 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| M5060CC1600 | 60 A, 1600 V, SILICON, RECTIFIER DIODE |
| M5060SB1000 | 60 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| M5060THC1200 | 3 PHASE, 60 A, 1200 V, SILICON, RECTIFIER DIODE |
| MBRB2035CTHE3/45 | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR106 | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Metal of siliconrectifier, majonty carrier conducton |
| MBR1060 | 功能描述:肖特基二极管与整流器 10A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR1060 _T0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR1060 C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 60V 10A 2-Pin(2+Tab) TO-220AC Tube |
| MBR1060 | 制造商:Fairchild Semiconductor Corporation 功能描述:SCHOTTKY DIODE |
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