- 您现在的位置：买卖IC网 > PDF目录264620 > MBR1060-HE3/45 (VISHAY SEMICONDUCTORS) 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC PDF资料下载
参数资料
| 型号： | MBR1060-HE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/5页 |
| 文件大小： | 129K |
| 代理商： | MBR1060-HE3/45 |
MBR(F,B)1035 thru MBR(F,B)1060
Vishay General Semiconductor
Document Number: 88669
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Schottky Barrier Rectifier
FEATURES
Low power loss, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters and polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.57 V, 0.70 V
TJ max.
150 °C
TO-263AB
CASE
PIN 2
PIN 1
TO-220AC
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
MBR10xx
MBRF10xx
MBRB10xx
ITO-220AC
PIN 2
PIN 1
1
2
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR1035
MBR1045
MBR1050
MBR1060
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Peak repetitive reverse current at tp = 2.0 s, 1 kHz
IRRM
1.0
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
VAC
1500
V
相关PDF资料 |
PDF描述 |
|---|---|
| MBR1635-E3/45 | 16 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR25H50CT-HE3/45 | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR30H60CT-HE3/45 | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB1650-E3/81 | 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB20H60CT-HE3/45 | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR1060HEWS | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER DIODE |
| MBR1060HEWS_R1_00001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR1060HF | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
| MBR1060HFR | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
| MBR1060Z | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
发布紧急采购，3分钟左右您将得到回复。